Growth of narrow and straight germanium nanowires by vapor-liquid-solid chemical vapor deposition

Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper describes the growth of germanium nanowires (Ge NWs) via vapor-liquid-solid (VLS) mechanism by the low-pressure chemical vapor deposition (CVD) technique. A systematic study of the growth conditions of the Ge NWs has been conducted by varying the size of the Au nanoparticles and the substrate temperature. The tapering of the nanowires has been minimised when the growth temperature is lowered from 300 to 280 °C which also contributes to the decrease in the diameter of the Ge NWs. The growth temperature of 280 °C yields Ge NWs with diameters of less than 5nm, offering an opportunity for the fabrication of high-performance germanium nanowire field-effect transistors.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume50
Issue number10 PART 1
DOIs
Publication statusPublished - 2011 Oct
Externally publishedYes

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Germanium
Nanowires
Chemical vapor deposition
germanium
nanowires
Vapors
vapor deposition
vapors
Liquids
liquids
Growth temperature
Low pressure chemical vapor deposition
tapering
Field effect transistors
temperature
field effect transistors
low pressure
Nanoparticles
Fabrication
nanoparticles

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Growth of narrow and straight germanium nanowires by vapor-liquid-solid chemical vapor deposition. / Simanullang, Marolop; Usami, Koichi; Kodera, Tetsuo; Uchida, Ken; Oda, Shunri.

In: Japanese Journal of Applied Physics, Vol. 50, No. 10 PART 1, 10.2011.

Research output: Contribution to journalArticle

Simanullang, Marolop ; Usami, Koichi ; Kodera, Tetsuo ; Uchida, Ken ; Oda, Shunri. / Growth of narrow and straight germanium nanowires by vapor-liquid-solid chemical vapor deposition. In: Japanese Journal of Applied Physics. 2011 ; Vol. 50, No. 10 PART 1.
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