Growth of polycrystalline Cu (In,Ga) Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices

Shogo Ishizuka, Hajime Shibata, Akimasa Yamada, Paul Fons, Keiichiro Sakurai, Koji Matsubara, Shigeru Niki

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Cu (In,Ga) Se2 (CIGS) thin films were grown using a rf-cracked Se-radical beam source. A unique combination of film properties, a highly dense and smooth surface with large grain size, is shown. These features seem to have no significant influence on the photovoltaic performance. Defect control in bulk CIGS leading to corresponding variations in the electrical and photoluminescence properties was found to be possible by regulating the Se-radical source parameters. A competitive energy conversion efficiency of 17.5%, comparable to that of a Se-evaporative source grown CIGS device, has been demonstrated from a solar cell fabricated using a Se-radical source grown CIGS absorber.

Original languageEnglish
Article number041902
JournalApplied Physics Letters
Volume91
Issue number4
DOIs
Publication statusPublished - 2007 Aug 3
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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