Growth of ZnO and device applications

K. Iwata, H. Tampo, A. Yamada, P. Fons, K. Matsubara, K. Sakurai, S. Ishizuka, S. Niki

Research output: Contribution to journalConference articlepeer-review

34 Citations (Scopus)

Abstract

The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.

Original languageEnglish
Pages (from-to)504-510
Number of pages7
JournalApplied Surface Science
Volume244
Issue number1-4
DOIs
Publication statusPublished - 2005 May 15
Externally publishedYes
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

Keywords

  • Bandgap engineering
  • II-VI
  • MBE
  • ZnO
  • ZnO on Si
  • ZnOSe
  • p-ZnO

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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