Growth of ZnO and device applications

K. Iwata, H. Tampo, A. Yamada, P. Fons, K. Matsubara, K. Sakurai, S. Ishizuka, S. Niki

Research output: Contribution to journalConference article

34 Citations (Scopus)

Abstract

The molecular beam epitaxy (MBE) technique was used for ZnO epitaxial growth and growth properties were evaluated. Intrinsic ZnO epilayers with mobility of 120 cm 2 /(V s) and carrier concentrations of 7 × 10 16 cm -3 were obtained. ZnO on Si, bandgap engineering using Se and nitrogen doping were carried out for research of device application using this growth technique. We found a large bowing parameter of 12.7 eV in ZnOSe, new ZnOSSe semiconductor that is lattice matched to Si and able to change the bandgap from UV to IR, and co-doping phenomenon of N and Ga doped ZnO.

Original languageEnglish
Pages (from-to)504-510
Number of pages7
JournalApplied Surface Science
Volume244
Issue number1-4
DOIs
Publication statusPublished - 2005 May 15
Externally publishedYes
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

Keywords

  • Bandgap engineering
  • II-VI
  • MBE
  • p-ZnO
  • ZnO
  • ZnO on Si
  • ZnOSe

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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  • Cite this

    Iwata, K., Tampo, H., Yamada, A., Fons, P., Matsubara, K., Sakurai, K., Ishizuka, S., & Niki, S. (2005). Growth of ZnO and device applications. Applied Surface Science, 244(1-4), 504-510. https://doi.org/10.1016/j.apsusc.2004.10.109