Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy

Zon, Pakawat Phienlumlert, Supachok Thainoi, Suwit Kiravittaya, Aniwat Tandaechanurat, Noppadon Nuntawong, Suwat Sopitpan, Visittapong Yordsri, Chanchana Thanachayanont, Songphol Kanjanachuchai, Somchai Ratanathammaphan, Somsak Panyakeow, Yasutomo Ota, Satoshi Iwamoto, Yasuhiko Arakawa

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Tuning growth of nanostructures can provide additional routes to engineer their characteristics. In this work, the authors report on a combined growth of GaSb/GaAs quantum dots (QDs) and growth of GaAs on (001) Ge substrate. Surface decorated with GaAs anti-phase domain is the initial template to investigate the growth-rate effects on the growth of self-assembled GaSb QDs. By varying the GaSb growth rates, QD ensembles with different morphologies are formed. Perpendicular alignment of elongated GaSb QDs is observed. Cross-sectional transmission electron microscopic images show a substantial reduction of lateral QD size when it is buried in GaAs matrix. Raman scattering as well as power-dependent photoluminescence spectroscopies are performed to reveal the optical properties of the nanostructures. Type-II band alignment characteristic is confirmed.

Original languageEnglish
Article number1800499
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
Publication statusPublished - 2019 Jan 9
Externally publishedYes


  • GaSb/GaAs
  • Ge substrate
  • molecular beam epitaxy
  • quantum dots

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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