Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors

Shigeki Kobayashi, Masumi Saitoh, Yukio Nakabayshi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Hall factor (γH) is investigated experimentally in the ultrathin-body (UTB) silicon-on-insulator (SOI) n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) with the SOI thicknesses (TSOI) of less than 10 nm. It is demonstrated experimentally for the first time that when T SOI is thicker than 4.2 nm, γH decreases slightly with a reduction of TSOI, whereas when TSOI is thinner than 4.2 nm, γH decreases drastically and becomes almost unity in TSOI of 2.5 nm. The γH is calculated considering only phonon scattering. Then, calculated γH is compared with γH obtained experimentally. In addition, it is found that in phonon scattering γH is determined dominantly by the intravalley scatterings of the twofold valleys. The dominance of the intravalley scatterings of the twofold valleys in the γH determination is attributed to the energy levels of subbands whereby most of the scatterings are the intravalley scatterings of the twofold valleys.

    Original languageEnglish
    Article number04DC23
    JournalJapanese journal of applied physics
    Volume49
    Issue number4 PART 2
    DOIs
    Publication statusPublished - 2010 Apr 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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