Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors

Shigeki Kobayashi, Masumi Saitoh, Yukio Nakabayshi, Takamitsu Ishihara, Toshinori Numata, Ken Uchida

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Hall factor (γH) is investigated experimentally in the ultrathin-body (UTB) silicon-on-insulator (SOI) n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) with the SOI thicknesses (TSOI) of less than 10 nm. It is demonstrated experimentally for the first time that when T SOI is thicker than 4.2 nm, γH decreases slightly with a reduction of TSOI, whereas when TSOI is thinner than 4.2 nm, γH decreases drastically and becomes almost unity in TSOI of 2.5 nm. The γH is calculated considering only phonon scattering. Then, calculated γH is compared with γH obtained experimentally. In addition, it is found that in phonon scattering γH is determined dominantly by the intravalley scatterings of the twofold valleys. The dominance of the intravalley scatterings of the twofold valleys in the γH determination is attributed to the energy levels of subbands whereby most of the scatterings are the intravalley scatterings of the twofold valleys.

Original languageEnglish
Article number04DC23
JournalJapanese Journal of Applied Physics
Volume49
Issue number4 PART 2
DOIs
Publication statusPublished - 2010 Apr
Externally publishedYes

Fingerprint

n-type semiconductors
MOSFET devices
metal oxide semiconductors
field effect transistors
insulators
Scattering
Silicon
Phonon scattering
SOI (semiconductors)
silicon
scattering
valleys
Electron energy levels
unity
energy levels

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors. / Kobayashi, Shigeki; Saitoh, Masumi; Nakabayshi, Yukio; Ishihara, Takamitsu; Numata, Toshinori; Uchida, Ken.

In: Japanese Journal of Applied Physics, Vol. 49, No. 4 PART 2, 04DC23, 04.2010.

Research output: Contribution to journalArticle

Kobayashi, Shigeki ; Saitoh, Masumi ; Nakabayshi, Yukio ; Ishihara, Takamitsu ; Numata, Toshinori ; Uchida, Ken. / Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 4 PART 2.
@article{d15e1a4daa324b42b094fca2c19a39e4,
title = "Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors",
abstract = "Hall factor (γH) is investigated experimentally in the ultrathin-body (UTB) silicon-on-insulator (SOI) n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) with the SOI thicknesses (TSOI) of less than 10 nm. It is demonstrated experimentally for the first time that when T SOI is thicker than 4.2 nm, γH decreases slightly with a reduction of TSOI, whereas when TSOI is thinner than 4.2 nm, γH decreases drastically and becomes almost unity in TSOI of 2.5 nm. The γH is calculated considering only phonon scattering. Then, calculated γH is compared with γH obtained experimentally. In addition, it is found that in phonon scattering γH is determined dominantly by the intravalley scatterings of the twofold valleys. The dominance of the intravalley scatterings of the twofold valleys in the γH determination is attributed to the energy levels of subbands whereby most of the scatterings are the intravalley scatterings of the twofold valleys.",
author = "Shigeki Kobayashi and Masumi Saitoh and Yukio Nakabayshi and Takamitsu Ishihara and Toshinori Numata and Ken Uchida",
year = "2010",
month = "4",
doi = "10.1143/JJAP.49.04DC23",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4 PART 2",

}

TY - JOUR

T1 - Hall factor in ultrathin-body silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors

AU - Kobayashi, Shigeki

AU - Saitoh, Masumi

AU - Nakabayshi, Yukio

AU - Ishihara, Takamitsu

AU - Numata, Toshinori

AU - Uchida, Ken

PY - 2010/4

Y1 - 2010/4

N2 - Hall factor (γH) is investigated experimentally in the ultrathin-body (UTB) silicon-on-insulator (SOI) n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) with the SOI thicknesses (TSOI) of less than 10 nm. It is demonstrated experimentally for the first time that when T SOI is thicker than 4.2 nm, γH decreases slightly with a reduction of TSOI, whereas when TSOI is thinner than 4.2 nm, γH decreases drastically and becomes almost unity in TSOI of 2.5 nm. The γH is calculated considering only phonon scattering. Then, calculated γH is compared with γH obtained experimentally. In addition, it is found that in phonon scattering γH is determined dominantly by the intravalley scatterings of the twofold valleys. The dominance of the intravalley scatterings of the twofold valleys in the γH determination is attributed to the energy levels of subbands whereby most of the scatterings are the intravalley scatterings of the twofold valleys.

AB - Hall factor (γH) is investigated experimentally in the ultrathin-body (UTB) silicon-on-insulator (SOI) n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) with the SOI thicknesses (TSOI) of less than 10 nm. It is demonstrated experimentally for the first time that when T SOI is thicker than 4.2 nm, γH decreases slightly with a reduction of TSOI, whereas when TSOI is thinner than 4.2 nm, γH decreases drastically and becomes almost unity in TSOI of 2.5 nm. The γH is calculated considering only phonon scattering. Then, calculated γH is compared with γH obtained experimentally. In addition, it is found that in phonon scattering γH is determined dominantly by the intravalley scatterings of the twofold valleys. The dominance of the intravalley scatterings of the twofold valleys in the γH determination is attributed to the energy levels of subbands whereby most of the scatterings are the intravalley scatterings of the twofold valleys.

UR - http://www.scopus.com/inward/record.url?scp=77952728263&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952728263&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.04DC23

DO - 10.1143/JJAP.49.04DC23

M3 - Article

AN - SCOPUS:77952728263

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 PART 2

M1 - 04DC23

ER -