Hardening by point defects in neutron irradiated AIN and sic.

Takayoshi Iseki, Mitsuharu Tezuka, Chang sam Kim, Tetsuya Suzuki, Hisayuki Suematsu, Toyohiko Yano

Research output: Contribution to journalArticle

Abstract

Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785°C up to a fluence of 5.2 × 1024 n/m2. The hardness was increased by up to 51% in AlN and 84% in SiC, The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200~1,400°C annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400°C annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for hardening in irradiated AlN and SiC.

Original languageEnglish
Pages (from-to)68-77
Number of pages10
JournalJournal of Nuclear Science and Technology
Volume30
Issue number1
DOIs
Publication statusPublished - 1993
Externally publishedYes

Fingerprint

Point defects
hardening
point defects
Hardening
Neutrons
hardness
Hardness
neutrons
Annealing
annealing
Irradiation
Temperature
irradiation
temperature
Dislocations (crystals)
fluence

Keywords

  • aluminium nitrides
  • annealing
  • defect cluster
  • dislocation
  • dislocation loop
  • hardening
  • neutron irradiation
  • point defects
  • silicon carbides
  • swelling
  • temperature dependence
  • Vickers hardness

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering

Cite this

Hardening by point defects in neutron irradiated AIN and sic. / Iseki, Takayoshi; Tezuka, Mitsuharu; Kim, Chang sam; Suzuki, Tetsuya; Suematsu, Hisayuki; Yano, Toyohiko.

In: Journal of Nuclear Science and Technology, Vol. 30, No. 1, 1993, p. 68-77.

Research output: Contribution to journalArticle

Iseki, Takayoshi ; Tezuka, Mitsuharu ; Kim, Chang sam ; Suzuki, Tetsuya ; Suematsu, Hisayuki ; Yano, Toyohiko. / Hardening by point defects in neutron irradiated AIN and sic. In: Journal of Nuclear Science and Technology. 1993 ; Vol. 30, No. 1. pp. 68-77.
@article{e6b6cbc4b8d94be7aa4f5aa7c1172675,
title = "Hardening by point defects in neutron irradiated AIN and sic.",
abstract = "Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785°C up to a fluence of 5.2 × 1024 n/m2. The hardness was increased by up to 51{\%} in AlN and 84{\%} in SiC, The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200~1,400°C annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400°C annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for hardening in irradiated AlN and SiC.",
keywords = "aluminium nitrides, annealing, defect cluster, dislocation, dislocation loop, hardening, neutron irradiation, point defects, silicon carbides, swelling, temperature dependence, Vickers hardness",
author = "Takayoshi Iseki and Mitsuharu Tezuka and Kim, {Chang sam} and Tetsuya Suzuki and Hisayuki Suematsu and Toyohiko Yano",
year = "1993",
doi = "10.3327/jnst.30.68",
language = "English",
volume = "30",
pages = "68--77",
journal = "Journal of Nuclear Science and Technology",
issn = "0022-3131",
publisher = "Atomic Energy Society of Japan",
number = "1",

}

TY - JOUR

T1 - Hardening by point defects in neutron irradiated AIN and sic.

AU - Iseki, Takayoshi

AU - Tezuka, Mitsuharu

AU - Kim, Chang sam

AU - Suzuki, Tetsuya

AU - Suematsu, Hisayuki

AU - Yano, Toyohiko

PY - 1993

Y1 - 1993

N2 - Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785°C up to a fluence of 5.2 × 1024 n/m2. The hardness was increased by up to 51% in AlN and 84% in SiC, The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200~1,400°C annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400°C annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for hardening in irradiated AlN and SiC.

AB - Pressureless-sintered AlN and hot-pressed, pressureless-sintered and reaction-bonded SiC were neutron irradiated at temperatures between 100 and 785°C up to a fluence of 5.2 × 1024 n/m2. The hardness was increased by up to 51% in AlN and 84% in SiC, The hardness decreased after annealing at temperatures around the irradiation temperature. At the same temperatures, the macroscopic length, which was increased by irradiation, also began to decrease. The hardness and length were almost recovered after 1,200~1,400°C annealing. Thus, hardening in irradiated AlN and SiC is controlled by the number of point defects, or, more precisely, by the strain caused by small point defect clusters which pin down dislocation movement. Dislocation loops were still observed in some samples after 1,400°C annealing while the hardness was almost recovered to that in the unirradiated state. Thus, the existence of dislocation loops is not grounds for hardening in irradiated AlN and SiC.

KW - aluminium nitrides

KW - annealing

KW - defect cluster

KW - dislocation

KW - dislocation loop

KW - hardening

KW - neutron irradiation

KW - point defects

KW - silicon carbides

KW - swelling

KW - temperature dependence

KW - Vickers hardness

UR - http://www.scopus.com/inward/record.url?scp=85007719441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85007719441&partnerID=8YFLogxK

U2 - 10.3327/jnst.30.68

DO - 10.3327/jnst.30.68

M3 - Article

VL - 30

SP - 68

EP - 77

JO - Journal of Nuclear Science and Technology

JF - Journal of Nuclear Science and Technology

SN - 0022-3131

IS - 1

ER -