Hardness and surface roughness of hydrogenated amorphous carbon-based films synthesized by atmospheric pressure-plasma enhanced chemical vapor deposition at low temperature

Mayui Noborisaka, Ryohei Horikoshi, So Nagashima, Akira Shirakura, Tetsuya Suzuki

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Hydrogenated amorphous carbon (a-C:H)-based films were synthesized by the dielectric barrier discharge-based plasma deposition at atmospheric pressure from C2H2 diluted with He or N2 gas with varying dilution ratios (R) and their hardness, surface roughness and chemical composition were analyzed. The films deposited from C2H 2/N2 contained nitrogen elements and they were softer with rougher surface compared with the a-C:H films deposited from C 2H2/He. Additionally the amount of nitrogen incorporation increased as the ratio R decreased, which led to deterioration of hardness and surface smoothness. As for C2H2/He, the film hardness slightly increased by decreasing the ratio R and the a-C:H (R = 1%) showed a maximum hardness of 1.1 GPa.

Original languageEnglish
Pages (from-to)114-119
Number of pages6
JournalThin Solid Films
Volume527
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Amorphous carbon
Plasma enhanced chemical vapor deposition
Atmospheric pressure
atmospheric pressure
surface roughness
roughness
hardness
Surface roughness
Hardness
vapor deposition
carbon
Nitrogen
nitrogen
Plasma deposition
Temperature
deterioration
Chemical elements
Dilution
Deterioration
dilution

Keywords

  • Atmospheric pressure plasma-enhanced chemical vapor deposition
  • Dilution gas
  • Hydrogenated amorphous carbon
  • Keywords
  • Low temperature
  • Surface roughness
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Hardness and surface roughness of hydrogenated amorphous carbon-based films synthesized by atmospheric pressure-plasma enhanced chemical vapor deposition at low temperature. / Noborisaka, Mayui; Horikoshi, Ryohei; Nagashima, So; Shirakura, Akira; Suzuki, Tetsuya.

In: Thin Solid Films, Vol. 527, 01.01.2013, p. 114-119.

Research output: Contribution to journalArticle

@article{678974ce75b2434ba315ee3fd6ab5323,
title = "Hardness and surface roughness of hydrogenated amorphous carbon-based films synthesized by atmospheric pressure-plasma enhanced chemical vapor deposition at low temperature",
abstract = "Hydrogenated amorphous carbon (a-C:H)-based films were synthesized by the dielectric barrier discharge-based plasma deposition at atmospheric pressure from C2H2 diluted with He or N2 gas with varying dilution ratios (R) and their hardness, surface roughness and chemical composition were analyzed. The films deposited from C2H 2/N2 contained nitrogen elements and they were softer with rougher surface compared with the a-C:H films deposited from C 2H2/He. Additionally the amount of nitrogen incorporation increased as the ratio R decreased, which led to deterioration of hardness and surface smoothness. As for C2H2/He, the film hardness slightly increased by decreasing the ratio R and the a-C:H (R = 1{\%}) showed a maximum hardness of 1.1 GPa.",
keywords = "Atmospheric pressure plasma-enhanced chemical vapor deposition, Dilution gas, Hydrogenated amorphous carbon, Keywords, Low temperature, Surface roughness, Thin films",
author = "Mayui Noborisaka and Ryohei Horikoshi and So Nagashima and Akira Shirakura and Tetsuya Suzuki",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2012.11.065",
language = "English",
volume = "527",
pages = "114--119",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Hardness and surface roughness of hydrogenated amorphous carbon-based films synthesized by atmospheric pressure-plasma enhanced chemical vapor deposition at low temperature

AU - Noborisaka, Mayui

AU - Horikoshi, Ryohei

AU - Nagashima, So

AU - Shirakura, Akira

AU - Suzuki, Tetsuya

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Hydrogenated amorphous carbon (a-C:H)-based films were synthesized by the dielectric barrier discharge-based plasma deposition at atmospheric pressure from C2H2 diluted with He or N2 gas with varying dilution ratios (R) and their hardness, surface roughness and chemical composition were analyzed. The films deposited from C2H 2/N2 contained nitrogen elements and they were softer with rougher surface compared with the a-C:H films deposited from C 2H2/He. Additionally the amount of nitrogen incorporation increased as the ratio R decreased, which led to deterioration of hardness and surface smoothness. As for C2H2/He, the film hardness slightly increased by decreasing the ratio R and the a-C:H (R = 1%) showed a maximum hardness of 1.1 GPa.

AB - Hydrogenated amorphous carbon (a-C:H)-based films were synthesized by the dielectric barrier discharge-based plasma deposition at atmospheric pressure from C2H2 diluted with He or N2 gas with varying dilution ratios (R) and their hardness, surface roughness and chemical composition were analyzed. The films deposited from C2H 2/N2 contained nitrogen elements and they were softer with rougher surface compared with the a-C:H films deposited from C 2H2/He. Additionally the amount of nitrogen incorporation increased as the ratio R decreased, which led to deterioration of hardness and surface smoothness. As for C2H2/He, the film hardness slightly increased by decreasing the ratio R and the a-C:H (R = 1%) showed a maximum hardness of 1.1 GPa.

KW - Atmospheric pressure plasma-enhanced chemical vapor deposition

KW - Dilution gas

KW - Hydrogenated amorphous carbon

KW - Keywords

KW - Low temperature

KW - Surface roughness

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84872612808&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872612808&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.11.065

DO - 10.1016/j.tsf.2012.11.065

M3 - Article

AN - SCOPUS:84872612808

VL - 527

SP - 114

EP - 119

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -