Heteroepitaxy and characterization of CuInSe2 on GaAs(001)

S. Niki, Y. Makita, A. Yamada, O. Hellman, P. J. Fons, A. Obara, Y. Okada, R. Shioda, H. Oyanagi, T. Kurafuji, S. Chichibu, H. Nakanishi

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57 Citations (Scopus)

Abstract

CuInSe2 (CIS) films with Cu/In ratios of γ = 0.81–1.81 have been grown on (001)-oriented GaAs substrates by molecular beam epitaxy at substrate temperatures of Ts = 350–550°C. Film properties were found to be substantially different for Cu- and In-rich regions. Cu-rich films were p-type, and streaky reflection high-energy electron diffraction (RHEED) patterns and sharp photoluminescence (PL) emissions were observed, suggesting high quality epitaxial films. In-rich films were highly resistive, and contained a large number of twins formed on {112} planes. A broad and strong PL emission, a donor-acceptor pair emission, was observed, which blue-shifted with increasing excitation power, indicating heavy compensation.

Original languageEnglish
Pages (from-to)1201-1205
Number of pages5
JournalJournal of Crystal Growth
Volume150
DOIs
Publication statusPublished - 1995

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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