High-current reliability of carbon nanotube via interconnects

Motonobu Sato, Takashi Hyakushima, Akio Kawabata, Tatsuhiro Nozue, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    We have improved the high-current reliability of carbon nanotube (CNT) via interconnects by chemical mechanical polishing (CMP) and vacuum in situ metal deposition processes. These processes enable us to decrease the contact resistance of a CNT via to the upper and lower Cu lines, and also increase the number of CNTs contributing to current flow. Consequently, the current density per CNT was decreased, and current tolerance properties were improved. As a result, the CNTs via interconnects were able to withstand a high current density of 4 × 107 A/cm2 per via, i.e., 1.7 × 10 8 A/cm2 per CNT. In addition, we found that the failure mode of Cu-line/CNT-via/Cu-line interconnects with a CNT density of 3 × 1011 tubes/cm2 was the slit void formation at the Cu line under the via, which is similar to that of Cu via interconnects. Furthermore, we discussed how to further increase the tolerance of electromigration (EM), taking advantage of their high thermal conductivity.

    Original languageEnglish
    Pages (from-to)1051021-1051024
    Number of pages4
    JournalJapanese journal of applied physics
    Volume49
    Issue number10
    DOIs
    Publication statusPublished - 2010 Oct 1

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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