High-current reliability of carbon nanotube via interconnects

Motonobu Sato, Takashi Hyakushima, Akio Kawabata, Tatsuhiro Nozue, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have improved the high-current reliability of carbon nanotube (CNT) via interconnects by chemical mechanical polishing (CMP) and vacuum in situ metal deposition processes. These processes enable us to decrease the contact resistance of a CNT via to the upper and lower Cu lines, and also increase the number of CNTs contributing to current flow. Consequently, the current density per CNT was decreased, and current tolerance properties were improved. As a result, the CNTs via interconnects were able to withstand a high current density of 4 × 107 A/cm2 per via, i.e., 1.7 × 10 8 A/cm2 per CNT. In addition, we found that the failure mode of Cu-line/CNT-via/Cu-line interconnects with a CNT density of 3 × 1011 tubes/cm2 was the slit void formation at the Cu line under the via, which is similar to that of Cu via interconnects. Furthermore, we discussed how to further increase the tolerance of electromigration (EM), taking advantage of their high thermal conductivity.

Original languageEnglish
Pages (from-to)1051021-1051024
Number of pages4
JournalJapanese Journal of Applied Physics
Volume49
Issue number10
DOIs
Publication statusPublished - 2010 Oct
Externally publishedYes

Fingerprint

high current
Carbon nanotubes
carbon nanotubes
Current density
Chemical mechanical polishing
Electromigration
Contact resistance
current density
Failure modes
Thermal conductivity
electromigration
failure modes
contact resistance
polishing
Vacuum
slits
voids
thermal conductivity
tubes
Metals

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Sato, M., Hyakushima, T., Kawabata, A., Nozue, T., Sato, S., Nihei, M., & Awano, Y. (2010). High-current reliability of carbon nanotube via interconnects. Japanese Journal of Applied Physics, 49(10), 1051021-1051024. https://doi.org/10.1143/JJAP.49.105102

High-current reliability of carbon nanotube via interconnects. / Sato, Motonobu; Hyakushima, Takashi; Kawabata, Akio; Nozue, Tatsuhiro; Sato, Shintaro; Nihei, Mizuhisa; Awano, Yuji.

In: Japanese Journal of Applied Physics, Vol. 49, No. 10, 10.2010, p. 1051021-1051024.

Research output: Contribution to journalArticle

Sato, M, Hyakushima, T, Kawabata, A, Nozue, T, Sato, S, Nihei, M & Awano, Y 2010, 'High-current reliability of carbon nanotube via interconnects', Japanese Journal of Applied Physics, vol. 49, no. 10, pp. 1051021-1051024. https://doi.org/10.1143/JJAP.49.105102
Sato M, Hyakushima T, Kawabata A, Nozue T, Sato S, Nihei M et al. High-current reliability of carbon nanotube via interconnects. Japanese Journal of Applied Physics. 2010 Oct;49(10):1051021-1051024. https://doi.org/10.1143/JJAP.49.105102
Sato, Motonobu ; Hyakushima, Takashi ; Kawabata, Akio ; Nozue, Tatsuhiro ; Sato, Shintaro ; Nihei, Mizuhisa ; Awano, Yuji. / High-current reliability of carbon nanotube via interconnects. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 10. pp. 1051021-1051024.
@article{3deaf8b0ddef4ce1a2afe4e3cc69df18,
title = "High-current reliability of carbon nanotube via interconnects",
abstract = "We have improved the high-current reliability of carbon nanotube (CNT) via interconnects by chemical mechanical polishing (CMP) and vacuum in situ metal deposition processes. These processes enable us to decrease the contact resistance of a CNT via to the upper and lower Cu lines, and also increase the number of CNTs contributing to current flow. Consequently, the current density per CNT was decreased, and current tolerance properties were improved. As a result, the CNTs via interconnects were able to withstand a high current density of 4 × 107 A/cm2 per via, i.e., 1.7 × 10 8 A/cm2 per CNT. In addition, we found that the failure mode of Cu-line/CNT-via/Cu-line interconnects with a CNT density of 3 × 1011 tubes/cm2 was the slit void formation at the Cu line under the via, which is similar to that of Cu via interconnects. Furthermore, we discussed how to further increase the tolerance of electromigration (EM), taking advantage of their high thermal conductivity.",
author = "Motonobu Sato and Takashi Hyakushima and Akio Kawabata and Tatsuhiro Nozue and Shintaro Sato and Mizuhisa Nihei and Yuji Awano",
year = "2010",
month = "10",
doi = "10.1143/JJAP.49.105102",
language = "English",
volume = "49",
pages = "1051021--1051024",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "10",

}

TY - JOUR

T1 - High-current reliability of carbon nanotube via interconnects

AU - Sato, Motonobu

AU - Hyakushima, Takashi

AU - Kawabata, Akio

AU - Nozue, Tatsuhiro

AU - Sato, Shintaro

AU - Nihei, Mizuhisa

AU - Awano, Yuji

PY - 2010/10

Y1 - 2010/10

N2 - We have improved the high-current reliability of carbon nanotube (CNT) via interconnects by chemical mechanical polishing (CMP) and vacuum in situ metal deposition processes. These processes enable us to decrease the contact resistance of a CNT via to the upper and lower Cu lines, and also increase the number of CNTs contributing to current flow. Consequently, the current density per CNT was decreased, and current tolerance properties were improved. As a result, the CNTs via interconnects were able to withstand a high current density of 4 × 107 A/cm2 per via, i.e., 1.7 × 10 8 A/cm2 per CNT. In addition, we found that the failure mode of Cu-line/CNT-via/Cu-line interconnects with a CNT density of 3 × 1011 tubes/cm2 was the slit void formation at the Cu line under the via, which is similar to that of Cu via interconnects. Furthermore, we discussed how to further increase the tolerance of electromigration (EM), taking advantage of their high thermal conductivity.

AB - We have improved the high-current reliability of carbon nanotube (CNT) via interconnects by chemical mechanical polishing (CMP) and vacuum in situ metal deposition processes. These processes enable us to decrease the contact resistance of a CNT via to the upper and lower Cu lines, and also increase the number of CNTs contributing to current flow. Consequently, the current density per CNT was decreased, and current tolerance properties were improved. As a result, the CNTs via interconnects were able to withstand a high current density of 4 × 107 A/cm2 per via, i.e., 1.7 × 10 8 A/cm2 per CNT. In addition, we found that the failure mode of Cu-line/CNT-via/Cu-line interconnects with a CNT density of 3 × 1011 tubes/cm2 was the slit void formation at the Cu line under the via, which is similar to that of Cu via interconnects. Furthermore, we discussed how to further increase the tolerance of electromigration (EM), taking advantage of their high thermal conductivity.

UR - http://www.scopus.com/inward/record.url?scp=78650144364&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650144364&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.105102

DO - 10.1143/JJAP.49.105102

M3 - Article

AN - SCOPUS:78650144364

VL - 49

SP - 1051021

EP - 1051024

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -