High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

Masumi Saitoh, Kensuke Ota, Chika Tanaka, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I on improvement of short-channel NW nFETs and pFETs by adopting 100-oriented NW channel instead of conventional 110 channel [3]. Although low-field mobility in 100- and 110-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I on in short-channel 100-oriented NW Tr. than in 110 NW Tr. is still unclear. In order to clarify the determining factors of I on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.

    Original languageEnglish
    Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
    DOIs
    Publication statusPublished - 2011 Dec 1
    Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
    Duration: 2011 Dec 72011 Dec 9

    Publication series

    Name2011 International Semiconductor Device Research Symposium, ISDRS 2011

    Other

    Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
    CountryUnited States
    CityCollege Park, MD
    Period11/12/711/12/9

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering

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  • Cite this

    Saitoh, M., Ota, K., Tanaka, C., Nakabayashi, Y., Uchida, K., & Numata, T. (2011). High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135145] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135145