High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

Masumi Saitoh; Kensuke Ota; Chika Tanaka; Yukio Nakabayashi; Ken Uchida; Toshinori Numata

doi:10.1109/ISDRS.2011.6135145

High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

Masumi Saitoh, Kensuke Ota, Chika Tanaka, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I _on improvement of short-channel NW nFETs and pFETs by adopting 100-oriented NW channel instead of conventional 110 channel [3]. Although low-field mobility in 100- and 110-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I _on in short-channel 100-oriented NW Tr. than in 110 NW Tr. is still unclear. In order to clarify the determining factors of I _on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.

Original language	English
Title of host publication	2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs	https://doi.org/10.1109/ISDRS.2011.6135145
Publication status	Published - 2011 Dec 1
Event	2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States Duration: 2011 Dec 7 → 2011 Dec 9

Publication series

Name	2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other	2011 International Semiconductor Device Research Symposium, ISDRS 2011
Country/Territory	United States
City	College Park, MD
Period	11/12/7 → 11/12/9

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ISDRS.2011.6135145

Cite this

Saitoh, M., Ota, K., Tanaka, C., Nakabayashi, Y., Uchida, K., & Numata, T. (2011). High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135145] (2011 International Semiconductor Device Research Symposium, ISDRS 2011). https://doi.org/10.1109/ISDRS.2011.6135145

High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel. / Saitoh, Masumi; Ota, Kensuke; Tanaka, Chika et al.
2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135145 (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Saitoh, M, Ota, K, Tanaka, C, Nakabayashi, Y, Uchida, K & Numata, T 2011, High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135145, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 11/12/7. https://doi.org/10.1109/ISDRS.2011.6135145

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abstract = "Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I on improvement of short-channel NW nFETs and pFETs by adopting 100-oriented NW channel instead of conventional 110 channel [3]. Although low-field mobility in 100- and 110-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I on in short-channel 100-oriented NW Tr. than in 110 NW Tr. is still unclear. In order to clarify the determining factors of I on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.",

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AU - Uchida, Ken

AU - Numata, Toshinori

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AB - Nanowire transistors (NW Tr.) are promising device structures for ultralow-power LSI [1-3]. In our previous work, we demonstrated I on improvement of short-channel NW nFETs and pFETs by adopting 100-oriented NW channel instead of conventional 110 channel [3]. Although low-field mobility in 100- and 110-oriented NW Tr. have been thoroughly studied [3,4], the origin of higher I on in short-channel 100-oriented NW Tr. than in 110 NW Tr. is still unclear. In order to clarify the determining factors of I on in short-channel devices, understanding of high-field carrier velocity as well as low-field mobility is required.

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High-field carrier velocity in silicon tri-gate nanowire pMOSFETs with <100>- and <110>-oriented channel

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