High-frequency characterization of intrinsic FinFET channel

H. Sakai, S. O'Uchi, T. Matsukawa, K. Endo, Y. X. Liu, T. Tsukada, Y. Ishikawa, T. Nakagawa, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara, H. Ishikuro

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)
    Original languageEnglish
    Title of host publication2010 IEEE International SOI Conference, SOI 2010
    DOIs
    Publication statusPublished - 2010 Dec 30
    Event2010 IEEE International Silicon on Insulator Conference, SOI 2010 - San Diego, CA, United States
    Duration: 2010 Oct 112010 Oct 14

    Publication series

    NameProceedings - IEEE International SOI Conference
    ISSN (Print)1078-621X

    Other

    Other2010 IEEE International Silicon on Insulator Conference, SOI 2010
    CountryUnited States
    CitySan Diego, CA
    Period10/10/1110/10/14

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Sakai, H., O'Uchi, S., Matsukawa, T., Endo, K., Liu, Y. X., Tsukada, T., Ishikawa, Y., Nakagawa, T., Sekigawa, T., Koike, H., Sakamoto, K., Masahara, M., & Ishikuro, H. (2010). High-frequency characterization of intrinsic FinFET channel. In 2010 IEEE International SOI Conference, SOI 2010 [5641064] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2010.5641064