High-frequency characterization of intrinsic FinFET channel

H. Sakai, S. O'Uchi, T. Matsukawa, K. Endo, Y. X. Liu, T. Tsukada, Y. Ishikawa, T. Nakagawa, T. Sekigawa, H. Koike, K. Sakamoto, M. Masahara, Hiroki Ishikuro

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)
Original languageEnglish
Title of host publicationProceedings - IEEE International SOI Conference
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Silicon on Insulator Conference, SOI 2010 - San Diego, CA, United States
Duration: 2010 Oct 112010 Oct 14

Other

Other2010 IEEE International Silicon on Insulator Conference, SOI 2010
CountryUnited States
CitySan Diego, CA
Period10/10/1110/10/14

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FinFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Sakai, H., O'Uchi, S., Matsukawa, T., Endo, K., Liu, Y. X., Tsukada, T., ... Ishikuro, H. (2010). High-frequency characterization of intrinsic FinFET channel. In Proceedings - IEEE International SOI Conference [5641064] https://doi.org/10.1109/SOI.2010.5641064

High-frequency characterization of intrinsic FinFET channel. / Sakai, H.; O'Uchi, S.; Matsukawa, T.; Endo, K.; Liu, Y. X.; Tsukada, T.; Ishikawa, Y.; Nakagawa, T.; Sekigawa, T.; Koike, H.; Sakamoto, K.; Masahara, M.; Ishikuro, Hiroki.

Proceedings - IEEE International SOI Conference. 2010. 5641064.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakai, H, O'Uchi, S, Matsukawa, T, Endo, K, Liu, YX, Tsukada, T, Ishikawa, Y, Nakagawa, T, Sekigawa, T, Koike, H, Sakamoto, K, Masahara, M & Ishikuro, H 2010, High-frequency characterization of intrinsic FinFET channel. in Proceedings - IEEE International SOI Conference., 5641064, 2010 IEEE International Silicon on Insulator Conference, SOI 2010, San Diego, CA, United States, 10/10/11. https://doi.org/10.1109/SOI.2010.5641064
Sakai H, O'Uchi S, Matsukawa T, Endo K, Liu YX, Tsukada T et al. High-frequency characterization of intrinsic FinFET channel. In Proceedings - IEEE International SOI Conference. 2010. 5641064 https://doi.org/10.1109/SOI.2010.5641064
Sakai, H. ; O'Uchi, S. ; Matsukawa, T. ; Endo, K. ; Liu, Y. X. ; Tsukada, T. ; Ishikawa, Y. ; Nakagawa, T. ; Sekigawa, T. ; Koike, H. ; Sakamoto, K. ; Masahara, M. ; Ishikuro, Hiroki. / High-frequency characterization of intrinsic FinFET channel. Proceedings - IEEE International SOI Conference. 2010.
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