High-frequency precise characterization of intrinsic FinFET channel

Hideo Sakai; Shinichi O'uchi; Takashi Matsukawa; Kazuhiko Endo; Yongxun Liu; Junichi Tsukada; Yuki Ishikawa; Tadashi Nakagawa; Toshihiro Sekigawa; Hanpei Koike; Kunihiro Sakamoto; Meishoku Masahara; Hiroki Ishikuro

doi:10.1587/transele.E95.C.752

High-frequency precise characterization of intrinsic FinFET channel

Hideo Sakai, Shinichi O'uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

Original language	English
Pages (from-to)	752-760
Number of pages	9
Journal	IEICE Transactions on Electronics
Volume	E95-C
Issue number	4
DOIs	https://doi.org/10.1587/transele.E95.C.752
Publication status	Published - 2012 Apr

Keywords

De-embedding
Device modeling
FinFET
RF
SOI

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1587/transele.E95.C.752

Cite this

@article{7b24b3d663c34481803abb8fbd647f4c,

title = "High-frequency precise characterization of intrinsic FinFET channel",

abstract = "This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.",

keywords = "De-embedding, Device modeling, FinFET, RF, SOI",

author = "Hideo Sakai and Shinichi O'uchi and Takashi Matsukawa and Kazuhiko Endo and Yongxun Liu and Junichi Tsukada and Yuki Ishikawa and Tadashi Nakagawa and Toshihiro Sekigawa and Hanpei Koike and Kunihiro Sakamoto and Meishoku Masahara and Hiroki Ishikuro",

year = "2012",

month = apr,

doi = "10.1587/transele.E95.C.752",

language = "English",

volume = "E95-C",

pages = "752--760",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "4",

}

TY - JOUR

T1 - High-frequency precise characterization of intrinsic FinFET channel

AU - Sakai, Hideo

AU - O'uchi, Shinichi

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - Liu, Yongxun

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Nakagawa, Tadashi

AU - Sekigawa, Toshihiro

AU - Koike, Hanpei

AU - Sakamoto, Kunihiro

AU - Masahara, Meishoku

AU - Ishikuro, Hiroki

PY - 2012/4

Y1 - 2012/4

N2 - This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

AB - This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

KW - De-embedding

KW - Device modeling

KW - FinFET

KW - RF

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=84859374312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859374312&partnerID=8YFLogxK

U2 - 10.1587/transele.E95.C.752

DO - 10.1587/transele.E95.C.752

M3 - Article

AN - SCOPUS:84859374312

SN - 0916-8524

VL - E95-C

SP - 752

EP - 760

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 4

ER -

High-frequency precise characterization of intrinsic FinFET channel

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this