High-frequency precise characterization of intrinsic FinFET channel

Hideo Sakai, Shinichi O'uchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara, Hiroki Ishikuro

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40 GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

    Original languageEnglish
    Pages (from-to)752-760
    Number of pages9
    JournalIEICE Transactions on Electronics
    VolumeE95-C
    Issue number4
    DOIs
    Publication statusPublished - 2012 Apr

    Keywords

    • De-embedding
    • Device modeling
    • FinFET
    • RF
    • SOI

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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  • Cite this

    Sakai, H., O'uchi, S., Matsukawa, T., Endo, K., Liu, Y., Tsukada, J., Ishikawa, Y., Nakagawa, T., Sekigawa, T., Koike, H., Sakamoto, K., Masahara, M., & Ishikuro, H. (2012). High-frequency precise characterization of intrinsic FinFET channel. IEICE Transactions on Electronics, E95-C(4), 752-760. https://doi.org/10.1587/transele.E95.C.752