High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

A. Kinoshita; C. Tanaka; K. Uchida; J. Koga

doi:10.1109/.2005.1469250

High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

A. Kinoshita, C. Tanaka, K. Uchida, J. Koga

Research output: Contribution to journal › Conference article › peer-review

75 Citations (Scopus)

Abstract

High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi₂ process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.

Original language	English
Article number	1469250
Pages (from-to)	158-159
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469250
Publication status	Published - 2005 Dec 1
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 2005 Jun 14 → 2005 Jun 14

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/.2005.1469250

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title = "High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions",

abstract = "High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.",

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T1 - High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

AU - Kinoshita, A.

AU - Tanaka, C.

AU - Uchida, K.

AU - Koga, J.

PY - 2005/12/1

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N2 - High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.

AB - High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.

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High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

Abstract

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