High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

A. Kinoshita, C. Tanaka, K. Uchida, J. Koga

    Research output: Contribution to journalConference articlepeer-review

    73 Citations (Scopus)

    Abstract

    High-performance operation was achieved in a novel Schottky-source/drain MOSFET (SET: Schottky Barrier Transistor), which has dopant-segregation (DS) Schottky source/drain. Sub-100 nm complementary DS-SBTs were fabricated using the CoSi2 process, which was fully compatible with the current CMOS technology. Excellent CMOS performance was obtained without any channel-mobility degradation, and CMOS ring oscillator was successfully demonstrated. In addition, >20 % improvement in drive current over the conventional n-MOSFETs was confirmed in the n-type DS-SBTs around the gate length of 50 nm.

    Original languageEnglish
    Article number1469250
    Pages (from-to)158-159
    Number of pages2
    JournalDigest of Technical Papers - Symposium on VLSI Technology
    Volume2005
    DOIs
    Publication statusPublished - 2005 Dec 1
    Event2005 Symposium on VLSI Technology - Kyoto, Japan
    Duration: 2005 Jun 142005 Jun 14

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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