High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions

A. Kinoshita, C. Tanaka, K. Uchida, J. Koga

    Research output: Contribution to journalConference articlepeer-review

    73 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'High-performance 50-nm-gate-length Schottky-source/drain MOSFETs with dopant-segregation junctions'. Together they form a unique fingerprint.

    Engineering & Materials Science