High-power GaN diode-pumped continuous wave Pr3+-doped LiYF 4 laser

Kohei Hashimoto, Fumihiko Kannari

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

A cw Pr3+: LiYF4 laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.

Original languageEnglish
Pages (from-to)2493-2495
Number of pages3
JournalOptics Letters
Volume32
Issue number17
DOIs
Publication statusPublished - 2007 Sep 1

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continuous radiation
diodes
high power lasers
lasers
projectors
semiconductor lasers
temperature

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

High-power GaN diode-pumped continuous wave Pr3+-doped LiYF 4 laser. / Hashimoto, Kohei; Kannari, Fumihiko.

In: Optics Letters, Vol. 32, No. 17, 01.09.2007, p. 2493-2495.

Research output: Contribution to journalArticle

@article{03735be3ab474fa4a6f7ba950bd16108,
title = "High-power GaN diode-pumped continuous wave Pr3+-doped LiYF 4 laser",
abstract = "A cw Pr3+: LiYF4 laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5{\%}. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.",
author = "Kohei Hashimoto and Fumihiko Kannari",
year = "2007",
month = "9",
day = "1",
doi = "10.1364/OL.32.002493",
language = "English",
volume = "32",
pages = "2493--2495",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "The Optical Society",
number = "17",

}

TY - JOUR

T1 - High-power GaN diode-pumped continuous wave Pr3+-doped LiYF 4 laser

AU - Hashimoto, Kohei

AU - Kannari, Fumihiko

PY - 2007/9/1

Y1 - 2007/9/1

N2 - A cw Pr3+: LiYF4 laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.

AB - A cw Pr3+: LiYF4 laser at 639 nm pumped by a high-power GaN laser diode (444 nm) is demonstrated. The highest laser power of 112 mW is achieved with an optical-optical conversion efficiency of 33.5%. Characteristics of this laser at elevated temperatures are also investigated for practical applications such as a laser projector.

UR - http://www.scopus.com/inward/record.url?scp=38449100804&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38449100804&partnerID=8YFLogxK

U2 - 10.1364/OL.32.002493

DO - 10.1364/OL.32.002493

M3 - Article

VL - 32

SP - 2493

EP - 2495

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 17

ER -