High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

Junichiro Kojou, Yojiro Watanbe, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
DOIs
Publication statusPublished - 2009
EventCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China
Duration: 2009 Aug 302009 Sep 3

Other

OtherCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
CountryChina
CityShanghai
Period09/8/3009/9/3

Fingerprint

switches
diodes
Switches
Lasers
High power lasers
high power lasers
lasers
Semiconductor lasers
semiconductor lasers

Keywords

  • AO-Q switch
  • GaN LD
  • Pr:LiYF4

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kojou, J., Watanbe, Y., & Kannari, F. (2009). High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest [5292555] https://doi.org/10.1109/CLEOPR.2009.5292555

High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. / Kojou, Junichiro; Watanbe, Yojiro; Kannari, Fumihiko.

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. 2009. 5292555.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kojou, J, Watanbe, Y & Kannari, F 2009, High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. in Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest., 5292555, CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics, Shanghai, China, 09/8/30. https://doi.org/10.1109/CLEOPR.2009.5292555
Kojou J, Watanbe Y, Kannari F. High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. 2009. 5292555 https://doi.org/10.1109/CLEOPR.2009.5292555
Kojou, Junichiro ; Watanbe, Yojiro ; Kannari, Fumihiko. / High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. 2009.
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abstract = "A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.",
keywords = "AO-Q switch, GaN LD, Pr:LiYF4",
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