High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

Junichiro Kojou, Yojiro Watanbe, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

Original languageEnglish
Title of host publicationCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
DOIs
Publication statusPublished - 2009 Dec 10
EventCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics - Shanghai, China
Duration: 2009 Aug 302009 Sep 3

Publication series

NamePacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

OtherCLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics
CountryChina
CityShanghai
Period09/8/3009/9/3

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Keywords

  • AO-Q switch
  • GaN LD
  • Pr:LiYF4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Kojou, J., Watanbe, Y., & Kannari, F. (2009). High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. In CLEO/Pacific Rim 2009 - 8th Pacific Rim Conference on Lasers and Electro-Optics [5292555] (Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest). https://doi.org/10.1109/CLEOPR.2009.5292555