High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

Junichiro Kojou, Yojiro Watanbe, Fumihiko Kannari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

Original languageEnglish
Title of host publicationOptics InfoBase Conference Papers
Publication statusPublished - 2009
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China
Duration: 2009 Aug 302009 Sep 3

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
CountryChina
CityShanghai
Period09/8/3009/9/3

Fingerprint

switches
diodes
Switches
Lasers
High power lasers
high power lasers
lasers
Semiconductor lasers
semiconductor lasers

Keywords

  • AO-Q switch
  • GaN LD
  • Pr:LiYF4

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Kojou, J., Watanbe, Y., & Kannari, F. (2009). High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. In Optics InfoBase Conference Papers

High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. / Kojou, Junichiro; Watanbe, Yojiro; Kannari, Fumihiko.

Optics InfoBase Conference Papers. 2009.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kojou, J, Watanbe, Y & Kannari, F 2009, High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. in Optics InfoBase Conference Papers. Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009, Shanghai, China, 09/8/30.
Kojou J, Watanbe Y, Kannari F. High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. In Optics InfoBase Conference Papers. 2009
Kojou, Junichiro ; Watanbe, Yojiro ; Kannari, Fumihiko. / High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. Optics InfoBase Conference Papers. 2009.
@inproceedings{262ea01bc33d4b49936cd3242054d58b,
title = "High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser",
abstract = "A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.",
keywords = "AO-Q switch, GaN LD, Pr:LiYF4",
author = "Junichiro Kojou and Yojiro Watanbe and Fumihiko Kannari",
year = "2009",
language = "English",
isbn = "9781424438303",
booktitle = "Optics InfoBase Conference Papers",

}

TY - GEN

T1 - High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

AU - Kojou, Junichiro

AU - Watanbe, Yojiro

AU - Kannari, Fumihiko

PY - 2009

Y1 - 2009

N2 - A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

AB - A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

KW - AO-Q switch

KW - GaN LD

KW - Pr:LiYF4

UR - http://www.scopus.com/inward/record.url?scp=84894056267&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894056267&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781424438303

BT - Optics InfoBase Conference Papers

ER -