High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser

Junichiro Kojou, Yojiro Watanbe, Fumihiko Kannari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A Q-switch Pr:LiYF4 laser at 639 nm pumped by a high-power GaN laser diode is demonstrated. The highest laser peak power of 4.8 W with a pulsewidth of 270 ns is obtained at 7.7 kHz.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
    Publication statusPublished - 2009 Dec 1
    EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 - Shanghai, China
    Duration: 2009 Aug 302009 Sep 3

    Publication series

    NameOptics InfoBase Conference Papers
    ISSN (Electronic)2162-2701

    Other

    OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009
    CountryChina
    CityShanghai
    Period09/8/3009/9/3

    Keywords

    • AO-Q switch
    • GaN LD
    • Pr:LiYF4

    ASJC Scopus subject areas

    • Instrumentation
    • Atomic and Molecular Physics, and Optics

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  • Cite this

    Kojou, J., Watanbe, Y., & Kannari, F. (2009). High-power GaN diode pumped Q-switch Pr3+-doped LiYF4 laser. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2009 (Optics InfoBase Conference Papers).