We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2003 Oct|
- Bulk crystal growth
- Hall effect
ASJC Scopus subject areas
- Physics and Astronomy(all)