High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth

Kohei M Itoh, Jiro Kato, Masafumi Uemura, Alexey K. Kaliteevskii, Oleg N. Godisov, Grigori G. Devyatych, Andrey D. Bulanov, Anatoli V. Gusev, Igor D. Kovalev, Pyotr G. Sennikov, Hans J. Pohl, Nikolai V. Abrosimov, Helge Riemann

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.

Original languageEnglish
Pages (from-to)6248-6251
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number10
Publication statusPublished - 2003 Oct

Fingerprint

isotope separation
purification
Isotopes
Purification
purity
Single crystals
single crystals
isotopes
isotopic enrichment
Crystals
Crystal growth
Industrial applications
crystals
Mass spectrometry
crystal growth
mass spectroscopy
Impurities
impurities

Keywords

  • Bulk crystal growth
  • Hall effect
  • Isotope
  • Silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High Purity Isotopically Enriched 29Si and 30Si Single Crystals : Isotope Separation, Purification, and Growth. / Itoh, Kohei M; Kato, Jiro; Uemura, Masafumi; Kaliteevskii, Alexey K.; Godisov, Oleg N.; Devyatych, Grigori G.; Bulanov, Andrey D.; Gusev, Anatoli V.; Kovalev, Igor D.; Sennikov, Pyotr G.; Pohl, Hans J.; Abrosimov, Nikolai V.; Riemann, Helge.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 10, 10.2003, p. 6248-6251.

Research output: Contribution to journalArticle

Itoh, KM, Kato, J, Uemura, M, Kaliteevskii, AK, Godisov, ON, Devyatych, GG, Bulanov, AD, Gusev, AV, Kovalev, ID, Sennikov, PG, Pohl, HJ, Abrosimov, NV & Riemann, H 2003, 'High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 10, pp. 6248-6251.
Itoh, Kohei M ; Kato, Jiro ; Uemura, Masafumi ; Kaliteevskii, Alexey K. ; Godisov, Oleg N. ; Devyatych, Grigori G. ; Bulanov, Andrey D. ; Gusev, Anatoli V. ; Kovalev, Igor D. ; Sennikov, Pyotr G. ; Pohl, Hans J. ; Abrosimov, Nikolai V. ; Riemann, Helge. / High Purity Isotopically Enriched 29Si and 30Si Single Crystals : Isotope Separation, Purification, and Growth. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 10. pp. 6248-6251.
@article{fac34525b12c4bfa88ef5da7743bc877,
title = "High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth",
abstract = "We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23{\%} and 99.74{\%}, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.",
keywords = "Bulk crystal growth, Hall effect, Isotope, Silicon",
author = "Itoh, {Kohei M} and Jiro Kato and Masafumi Uemura and Kaliteevskii, {Alexey K.} and Godisov, {Oleg N.} and Devyatych, {Grigori G.} and Bulanov, {Andrey D.} and Gusev, {Anatoli V.} and Kovalev, {Igor D.} and Sennikov, {Pyotr G.} and Pohl, {Hans J.} and Abrosimov, {Nikolai V.} and Helge Riemann",
year = "2003",
month = "10",
language = "English",
volume = "42",
pages = "6248--6251",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "10",

}

TY - JOUR

T1 - High Purity Isotopically Enriched 29Si and 30Si Single Crystals

T2 - Isotope Separation, Purification, and Growth

AU - Itoh, Kohei M

AU - Kato, Jiro

AU - Uemura, Masafumi

AU - Kaliteevskii, Alexey K.

AU - Godisov, Oleg N.

AU - Devyatych, Grigori G.

AU - Bulanov, Andrey D.

AU - Gusev, Anatoli V.

AU - Kovalev, Igor D.

AU - Sennikov, Pyotr G.

AU - Pohl, Hans J.

AU - Abrosimov, Nikolai V.

AU - Riemann, Helge

PY - 2003/10

Y1 - 2003/10

N2 - We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.

AB - We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.

KW - Bulk crystal growth

KW - Hall effect

KW - Isotope

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0347527236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347527236&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0347527236

VL - 42

SP - 6248

EP - 6251

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 10

ER -