High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth

Kohei M. Itoh, Jiro Kato, Masafumi Uemura, Alexey K. Kaliteevskii, Oleg N. Godisov, Grigori G. Devyatych, Andrey D. Bulanov, Anatoli V. Gusev, Igor D. Kovalev, Pyotr G. Sennikov, Hans J. Pohl, Nikolai V. Abrosimov, Helge Riemann

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)


We report the successful isotope separation and bulk single crystal growth of 29Si and 30Si stable isotopes. The isotopic enrichments of the 29Si and 30Si single crystals determined by mass spectrometry are 99.23% and 99.74%, respectively. Both crystals have the electrically active net-impurity concentration less than 1015 cm-3. Thanks to the result of this work and the 28Si crystals we grew previously, high quality single crystals of every stable Si isotope (28Si, 29Si, and 30Si) have been made available for a wide variety of basic research and industrial applications.

Original languageEnglish
Pages (from-to)6248-6251
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number10
Publication statusPublished - 2003 Oct


  • Bulk crystal growth
  • Hall effect
  • Isotope
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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