High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

S. Takahashi; T. Tajiri; K. Watanabe; Y. Ota; S. Iwamoto; Y. Arakawa

doi:10.1049/el.2017.4542

High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

S. Takahashi, T. Tajiri, K. Watanabe, Y. Ota, S. Iwamoto, Y. Arakawa

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.

Original language	English
Pages (from-to)	305-307
Number of pages	3
Journal	Electronics Letters
Volume	54
Issue number	5
DOIs	https://doi.org/10.1049/el.2017.4542
Publication status	Published - 2018 Mar 8
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el.2017.4542

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title = "High-Q nanocavities in semiconductor-based three-dimensional photonic crystals",

abstract = "The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.",

author = "S. Takahashi and T. Tajiri and K. Watanabe and Y. Ota and S. Iwamoto and Y. Arakawa",

note = "Funding Information: Acknowledgment: This work was supported by a JSPS KAKENHI Grant-in-Aid for Scientific Research (no. JP16H06085), a Grant-in-Aid for Specially Promoted Research (no. JP15H05700), and a Grant-in-Aid for Scientific Research on Innovative Areas (no. JP15H05868). Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2018.",

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doi = "10.1049/el.2017.4542",

language = "English",

volume = "54",

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journal = "Electronics Letters",

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T1 - High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

AU - Takahashi, S.

AU - Tajiri, T.

AU - Watanabe, K.

AU - Ota, Y.

AU - Iwamoto, S.

AU - Arakawa, Y.

N1 - Funding Information: Acknowledgment: This work was supported by a JSPS KAKENHI Grant-in-Aid for Scientific Research (no. JP16H06085), a Grant-in-Aid for Specially Promoted Research (no. JP15H05700), and a Grant-in-Aid for Scientific Research on Innovative Areas (no. JP15H05868). Publisher Copyright: © The Institution of Engineering and Technology 2018.

PY - 2018/3/8

Y1 - 2018/3/8

N2 - The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.

AB - The high-quality factors (Q-factors) of nanocavities in three-dimensional photonic crystals were experimentally demonstrated by increasing the in-plane area of the structure. Entire structures made of GaAs were fabricated by a micro-manipulation technique, and the nanocavities contained InAs self-assembled quantum dots that emitted near-infrared light. The obtained Q-factor was improved to 93,000, which is 2.4 times larger than that in a previous report of a three-dimensional photonic crystal nanocavity. Due to this large Q-factor, a lasing oscillation from this cavity mode was successfully observed.

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JO - Electronics Letters

JF - Electronics Letters

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ER -

High-Q nanocavities in semiconductor-based three-dimensional photonic crystals

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