High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition

Yuichi Yamazaki, Naoshi Sakuma, Masayuki Katagiri, Mariko Suzuki, Tadashi Sakai, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

Research output: Contribution to journalArticle

9 Citations (Scopus)


Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.

Original languageEnglish
Pages (from-to)340041-340043
Number of pages3
JournalApplied Physics Express
Issue number3
Publication statusPublished - 2008 Mar 1
Externally publishedYes


ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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