Abstract
Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.
| Original language | English |
|---|---|
| Pages (from-to) | 340041-340043 |
| Number of pages | 3 |
| Journal | Applied Physics Express |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2008 Mar 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Yamazaki, Y., Sakuma, N., Katagiri, M., Suzuki, M., Sakai, T., Sato, S., Nihei, M., & Awano, Y. (2008). High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition. Applied Physics Express, 1(3), 340041-340043. https://doi.org/10.1143/APEX.1.034004