High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition

Yuichi Yamazaki, Naoshi Sakuma, Masayuki Katagiri, Mariko Suzuki, Tadashi Sakai, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.

Original languageEnglish
Pages (from-to)340041-340043
Number of pages3
JournalApplied Physics Express
Volume1
Issue number3
DOIs
Publication statusPublished - 2008 Mar
Externally publishedYes

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Chemical vapor deposition
Carbon nanotubes
carbon nanotubes
vapor deposition
Charged particles
Plasmas
pulses
Electrons
Ions
charged particles
Temperature
Screening
Electrodes
ions
electrons
screening
temperature
electrodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition. / Yamazaki, Yuichi; Sakuma, Naoshi; Katagiri, Masayuki; Suzuki, Mariko; Sakai, Tadashi; Sato, Shintaro; Nihei, Mizuhisa; Awano, Yuji.

In: Applied Physics Express, Vol. 1, No. 3, 03.2008, p. 340041-340043.

Research output: Contribution to journalArticle

Yamazaki, Y, Sakuma, N, Katagiri, M, Suzuki, M, Sakai, T, Sato, S, Nihei, M & Awano, Y 2008, 'High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition', Applied Physics Express, vol. 1, no. 3, pp. 340041-340043. https://doi.org/10.1143/APEX.1.034004
Yamazaki, Yuichi ; Sakuma, Naoshi ; Katagiri, Masayuki ; Suzuki, Mariko ; Sakai, Tadashi ; Sato, Shintaro ; Nihei, Mizuhisa ; Awano, Yuji. / High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition. In: Applied Physics Express. 2008 ; Vol. 1, No. 3. pp. 340041-340043.
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