Abstract
Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.
| Original language | English |
|---|---|
| Pages (from-to) | 340041-340043 |
| Number of pages | 3 |
| Journal | Applied Physics Express |
| Volume | 1 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2008 Mar |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition. / Yamazaki, Yuichi; Sakuma, Naoshi; Katagiri, Masayuki; Suzuki, Mariko; Sakai, Tadashi; Sato, Shintaro; Nihei, Mizuhisa; Awano, Yuji.
In: Applied Physics Express, Vol. 1, No. 3, 03.2008, p. 340041-340043.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition
AU - Yamazaki, Yuichi
AU - Sakuma, Naoshi
AU - Katagiri, Masayuki
AU - Suzuki, Mariko
AU - Sakai, Tadashi
AU - Sato, Shintaro
AU - Nihei, Mizuhisa
AU - Awano, Yuji
PY - 2008/3
Y1 - 2008/3
N2 - Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.
AB - Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.
UR - http://www.scopus.com/inward/record.url?scp=57049117424&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=57049117424&partnerID=8YFLogxK
U2 - 10.1143/APEX.1.034004
DO - 10.1143/APEX.1.034004
M3 - Article
AN - SCOPUS:57049117424
VL - 1
SP - 340041
EP - 340043
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 3
ER -