High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition

Yuichi Yamazaki; Naoshi Sakuma; Masayuki Katagiri; Mariko Suzuki; Tadashi Sakai; Shintaro Sato; Mizuhisa Nihei; Yuji Awano

doi:10.1143/APEX.1.034004

High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition

Yuichi Yamazaki, Naoshi Sakuma, Masayuki Katagiri, Mariko Suzuki, Tadashi Sakai, Shintaro Sato, Mizuhisa Nihei, Yuji Awano

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.

Original language	English
Pages (from-to)	340041-340043
Number of pages	3
Journal	Applied Physics Express
Volume	1
Issue number	3
DOIs	https://doi.org/10.1143/APEX.1.034004
Publication status	Published - 2008 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition",

abstract = "Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.",

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T1 - High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition

AU - Yamazaki, Yuichi

AU - Sakuma, Naoshi

AU - Katagiri, Masayuki

AU - Suzuki, Mariko

AU - Sakai, Tadashi

AU - Sato, Shintaro

AU - Nihei, Mizuhisa

AU - Awano, Yuji

PY - 2008/3/1

Y1 - 2008/3/1

N2 - Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.

AB - Carbon nanotube (CNT) growth at temperatures below 400°C by pulse-excited remote plasma chemical vapor deposition was demonstrated. Reduction of plasma power was carried out In order to decrease the amount of all particles, ions, electrons, and radicals. In addition, a biased plate-type screening electrode was Introduced to removal of charged particles, ions, and electrons. The negative bias below 50 V was most effective for growth rate. High-quality CNT growth with the growth rate of 98nm/mln was successfully obtained at 400°C. The results suggest that both removal of charged particles and control of the amount of radicals are important for high-quality CNT growth at temperatures below 400°C.

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High-quality carbon nanotube growth at low temperature by pulse-excited remote plasma chemical vapor deposition

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