High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids

E. Pelucchi, M. Baier, Y. Ducommun, Shinichi Watanabe, E. Kapon

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We report here on the fabrication by organometallic chemical vapour deposition of InxGa1-xAs quantum dots (QDs) with x up to 35% grown in pyramidal recess patterns with Al0.30Ga0.70As barriers. We show QD luminescence with narrow PL lines, tuning of the emission energies varying by more than 180 meV and ground state to first excited state separations as large as 80 meV.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume238
Issue number2
DOIs
Publication statusPublished - 2003 Jul
Externally publishedYes

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pyramids
Semiconductor quantum dots
quantum dots
recesses
Organometallics
Excited states
Ground state
Luminescence
Chemical vapor deposition
Tuning
tuning
vapor deposition
luminescence
Fabrication
fabrication
ground state
excitation
energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids. / Pelucchi, E.; Baier, M.; Ducommun, Y.; Watanabe, Shinichi; Kapon, E.

In: Physica Status Solidi (B) Basic Research, Vol. 238, No. 2, 07.2003, p. 233-236.

Research output: Contribution to journalArticle

Pelucchi, E. ; Baier, M. ; Ducommun, Y. ; Watanabe, Shinichi ; Kapon, E. / High-quality InxGa1-xAs/Al0.30Ga0.70As quantum dots grown in inverted pyramids. In: Physica Status Solidi (B) Basic Research. 2003 ; Vol. 238, No. 2. pp. 233-236.
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