1Gbit/s III-V/CMOS hybrid receivers consisting of a GaAs- or InGaAs-photodiode and a 0.5μm CMOS receiver circuit have been realised by wafer-bonding. The circuit is simple and compact with high sensitivity and broad bandwidth due to the direct attachment of III-V PDs and the absence of any parasitic capacitance. Sensitivities of -27.4 and -28.0dBm at 1 Gbit/s are demonstrated for 0.85 and 1.55 μm receivers, respectively.
ASJC Scopus subject areas
- Electrical and Electronic Engineering