A GaAs or InGaAs photodiode was attached to a 0.5-μm CMOS receiver circuit by a polyimide wafer-bonding technique. The circuit is simple and small, and has high sensitivity and a broad bandwidth due to the low parasitic capacitance on the photodiode. The receiver operates with a single 3.3-V supply voltage at either 0.85 or 1.55 μm and achieves -27.1-dBm sensitivity at 1 Gb/s.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering