High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding

Tatsushi Nakahara; Hiroyuki Tsuda; Kouta Tateno; Noboru Ishihara; Chikara Amano

High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding

Tatsushi Nakahara, Hiroyuki Tsuda, Kouta Tateno, Noboru Ishihara, Chikara Amano

Research output: Contribution to journal › Conference article › peer-review

Abstract

A GaAs or InGaAs photodiode was attached to a 0.5-μm CMOS receiver circuit by a polyimide wafer-bonding technique. The circuit is simple and small, and has high sensitivity and a broad bandwidth due to the low parasitic capacitance on the photodiode. The receiver operates with a single 3.3-V supply voltage at either 0.85 or 1.55 μm and achieves -27.1-dBm sensitivity at 1 Gb/s.

Original language	English
Pages (from-to)	17-18
Number of pages	2
Journal	LEOS Summer Topical Meeting
Publication status	Published - 2000 Jan 1
Externally published	Yes
Event	2000 IEEE/LEOS Summer Topical Meeting - Aventura, FL, USA Duration: 2000 Jul 24 → 2000 Jul 28

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

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title = "High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding",

abstract = "A GaAs or InGaAs photodiode was attached to a 0.5-μm CMOS receiver circuit by a polyimide wafer-bonding technique. The circuit is simple and small, and has high sensitivity and a broad bandwidth due to the low parasitic capacitance on the photodiode. The receiver operates with a single 3.3-V supply voltage at either 0.85 or 1.55 μm and achieves -27.1-dBm sensitivity at 1 Gb/s.",

author = "Tatsushi Nakahara and Hiroyuki Tsuda and Kouta Tateno and Noboru Ishihara and Chikara Amano",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "17--18",

journal = "LEOS Summer Topical Meeting",

issn = "1099-4742",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2000 IEEE/LEOS Summer Topical Meeting ; Conference date: 24-07-2000 Through 28-07-2000",

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TY - JOUR

T1 - High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding

AU - Nakahara, Tatsushi

AU - Tsuda, Hiroyuki

AU - Tateno, Kouta

AU - Ishihara, Noboru

AU - Amano, Chikara

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A GaAs or InGaAs photodiode was attached to a 0.5-μm CMOS receiver circuit by a polyimide wafer-bonding technique. The circuit is simple and small, and has high sensitivity and a broad bandwidth due to the low parasitic capacitance on the photodiode. The receiver operates with a single 3.3-V supply voltage at either 0.85 or 1.55 μm and achieves -27.1-dBm sensitivity at 1 Gb/s.

AB - A GaAs or InGaAs photodiode was attached to a 0.5-μm CMOS receiver circuit by a polyimide wafer-bonding technique. The circuit is simple and small, and has high sensitivity and a broad bandwidth due to the low parasitic capacitance on the photodiode. The receiver operates with a single 3.3-V supply voltage at either 0.85 or 1.55 μm and achieves -27.1-dBm sensitivity at 1 Gb/s.

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M3 - Conference article

AN - SCOPUS:0033702754

SN - 1099-4742

SP - 17

EP - 18

JO - LEOS Summer Topical Meeting

JF - LEOS Summer Topical Meeting

T2 - 2000 IEEE/LEOS Summer Topical Meeting

Y2 - 24 July 2000 through 28 July 2000

ER -

High-sensitivity 1-Gb/s CMOS receiver integrated with a III-V photodiode by wafer-bonding

Abstract

ASJC Scopus subject areas

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