A high speed 1K multiplied by 4-b static RAM has been designed and fabricated using 0. 5- mu m-gate HEMT (high-electron-mobility-transistor) technology. The address access time is 0. 5 ns and the chip power dissipation is 5. 7 W at room temperature. A summary of the RAM characteristics is presented.
|Number of pages||4|
|Publication status||Published - 1987 Dec 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering