TY - JOUR
T1 - High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer
AU - Miyoshi, Yusuke
AU - Fukazawa, Yusuke
AU - Amasaka, Yuya
AU - Reckmann, Robin
AU - Yokoi, Tomoya
AU - Ishida, Kazuki
AU - Kawahara, Kenji
AU - Ago, Hiroki
AU - Maki, Hideyuki
N1 - Funding Information:
The authors thank D. Tsuya, E. Watanabe and S. Tanigawa in NIMS, S. Honda, Y. Matsumoto, H. Ueno, H. Ishikuro, Y. Monnai and R. Mogi in Keio University, for technical support and discussions. This work was partially supported by PRESTO (Grant Number JPMJPR152B) and A-STEP from JST, KAKENHI (Grant Number 16H04355, 23686055, 26220604 and 16H00917) and Core-to-Core program from JSPS, SCOPE from MIC, the Cooperative Research Program of “Network Joint Research Center for Materials and Devices”, Spintronics Research Network of Japan, and NIMS Nanofabrication Platform in Nanotechnology Platform Project by MEXT.
PY - 2018/12/1
Y1 - 2018/12/1
N2 - High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.
AB - High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.
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U2 - 10.1038/s41467-018-03695-x
DO - 10.1038/s41467-018-03695-x
M3 - Article
C2 - 29599460
AN - SCOPUS:85044673704
VL - 9
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
IS - 1
M1 - 1279
ER -