TY - JOUR
T1 - High-Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability
AU - Mitrofanov, Kirill V.
AU - Saito, Yuta
AU - Miyata, Noriyuki
AU - Fons, Paul
AU - Kolobov, Alexander V.
AU - Tominaga, Junji
N1 - Funding Information:
This work was supported by JST-CREST (JPMJCR14F1). A part of this study was supported by the NIMS Nanofabrication Platform in Nanotechnology Platform Project sponsored by the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan.
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/8
Y1 - 2019/8
N2 - Ge–Sb–Te alloy based phase-change memory devices have recently been shown to be switchable in a bipolar mode. However, to date bipolar switching has only been demonstrated at relatively low speeds (on the order of tens of µs), and with endurance limited to 104 switching cycles. In this work, in lieu of a Ge–Sb–Te alloy, fast and durable bipolar switching is demonstrated in interfacial phase change memory (iPCM). It is revealed that in iPCM devices, bipolar switching can be carried out at least a factor of 1000 times faster and with at least 1000 times greater endurance than in conventional Ge–Sb–Te alloy based phase-change devices. Additionally, bipolar switching was found to exhibit a larger RESET to SET resistance ratio and lower power consumption compared to conventional Ge–Sb–Te alloy based devices.
AB - Ge–Sb–Te alloy based phase-change memory devices have recently been shown to be switchable in a bipolar mode. However, to date bipolar switching has only been demonstrated at relatively low speeds (on the order of tens of µs), and with endurance limited to 104 switching cycles. In this work, in lieu of a Ge–Sb–Te alloy, fast and durable bipolar switching is demonstrated in interfacial phase change memory (iPCM). It is revealed that in iPCM devices, bipolar switching can be carried out at least a factor of 1000 times faster and with at least 1000 times greater endurance than in conventional Ge–Sb–Te alloy based phase-change devices. Additionally, bipolar switching was found to exhibit a larger RESET to SET resistance ratio and lower power consumption compared to conventional Ge–Sb–Te alloy based devices.
KW - bipolar switching
KW - chalcogenide superlattice
KW - phase-change memory
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U2 - 10.1002/pssr.201900105
DO - 10.1002/pssr.201900105
M3 - Letter
AN - SCOPUS:85065021089
SN - 1862-6254
VL - 13
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 8
M1 - 1900105
ER -