High-Temperature Operational Piezoresistive Pressure Sensor on Standard CMOS Process

Takaya Sugiura, Hiroki Miura, Nobuhiko Nakano

Research output: Contribution to journalArticlepeer-review

Abstract

Piezoresistive pressure sensor designed in the standard CMOS process is proposed. The device features the electrical separation by the pn-junction provided by the standard CMOS process, which it does not need any MEMS processes or the post-processes. The proposed device is composed of vertical multi-pn junctions, and two methods of 3-layer and 4-layer are considered with their advantages and drawbacks. It features high-temperature robustness with silicon material, and integrability to silicon devices. It is designed without any additional processes and therefore enables to compatible to the CMOS devices with low-cost and suitable for mass production that are favorable for IoT (Internet of Things) applications.

Original languageEnglish
Pages (from-to)1
Number of pages1
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
DOIs
Publication statusAccepted/In press - 2022

Keywords

  • CMOS
  • High temperature
  • Piezoresistance
  • Piezoresistance
  • Robustness
  • Semiconductor device modeling
  • Semiconductor process modeling
  • Sensitivity
  • Substrates
  • Temperature sensors
  • Triple well

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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