High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates

M. H. Baier, S. Watanabe, E. Pelucchi, E. Kapon

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The uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QD) grown by chemical vapor deposition (CVD) on prepatterned substrates was analyzed. The pyramidal QD were fabricated by low pressure organometallic CVD on a (111)B-oriented GaAs substrate patterned with a 5 μm pitch hexagonal matrix of tetrahedral recesses. It was found that the observed inhomogeneous broadening of about 7.6 meV for a s-p separation energy of at least 55 meV is small compared to other QD systems. A high reproducibility of the sharp QD emission features in the single exciton regime was observed.

Original languageEnglish
Pages (from-to)1943-1945
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 2004 Mar 15


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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