The uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QD) grown by chemical vapor deposition (CVD) on prepatterned substrates was analyzed. The pyramidal QD were fabricated by low pressure organometallic CVD on a (111)B-oriented GaAs substrate patterned with a 5 μm pitch hexagonal matrix of tetrahedral recesses. It was found that the observed inhomogeneous broadening of about 7.6 meV for a s-p separation energy of at least 55 meV is small compared to other QD systems. A high reproducibility of the sharp QD emission features in the single exciton regime was observed.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2004 Mar 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)