High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates

M. H. Baier; S. Watanabe; E. Pelucchi; E. Kapon

doi:10.1063/1.1682677

High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates

M. H. Baier, S. Watanabe, E. Pelucchi, E. Kapon

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79 Citations (Scopus)

Abstract

The uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QD) grown by chemical vapor deposition (CVD) on prepatterned substrates was analyzed. The pyramidal QD were fabricated by low pressure organometallic CVD on a (111)B-oriented GaAs substrate patterned with a 5 μm pitch hexagonal matrix of tetrahedral recesses. It was found that the observed inhomogeneous broadening of about 7.6 meV for a s-p separation energy of at least 55 meV is small compared to other QD systems. A high reproducibility of the sharp QD emission features in the single exciton regime was observed.

Original language	English
Pages (from-to)	1943-1945
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	11
DOIs	https://doi.org/10.1063/1.1682677
Publication status	Published - 2004 Mar 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1682677

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abstract = "The uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QD) grown by chemical vapor deposition (CVD) on prepatterned substrates was analyzed. The pyramidal QD were fabricated by low pressure organometallic CVD on a (111)B-oriented GaAs substrate patterned with a 5 μm pitch hexagonal matrix of tetrahedral recesses. It was found that the observed inhomogeneous broadening of about 7.6 meV for a s-p separation energy of at least 55 meV is small compared to other QD systems. A high reproducibility of the sharp QD emission features in the single exciton regime was observed.",

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AU - Baier, M. H.

AU - Watanabe, S.

AU - Pelucchi, E.

AU - Kapon, E.

PY - 2004/3/15

Y1 - 2004/3/15

N2 - The uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QD) grown by chemical vapor deposition (CVD) on prepatterned substrates was analyzed. The pyramidal QD were fabricated by low pressure organometallic CVD on a (111)B-oriented GaAs substrate patterned with a 5 μm pitch hexagonal matrix of tetrahedral recesses. It was found that the observed inhomogeneous broadening of about 7.6 meV for a s-p separation energy of at least 55 meV is small compared to other QD systems. A high reproducibility of the sharp QD emission features in the single exciton regime was observed.

AB - The uniformity of site-controlled, pyramidal InGaAs/AlGaAs semiconductor quantum dots (QD) grown by chemical vapor deposition (CVD) on prepatterned substrates was analyzed. The pyramidal QD were fabricated by low pressure organometallic CVD on a (111)B-oriented GaAs substrate patterned with a 5 μm pitch hexagonal matrix of tetrahedral recesses. It was found that the observed inhomogeneous broadening of about 7.6 meV for a s-p separation energy of at least 55 meV is small compared to other QD systems. A high reproducibility of the sharp QD emission features in the single exciton regime was observed.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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High uniformity of site-controlled pyramidal quantum dots grown on prepatterned substrates

Abstract

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