Highly integrated single electron devices and giga-bit lithography

T. Hiramoto, Hiroki Ishikuro, H. Majima

Research output: Contribution to journalArticle

Abstract

Single electron transistors and memories for VLSI applications are fabricated and their characteristics are intensively investigated. It is shown that single electron transistors operating at room temperature are affected by quantum confinement effects and are very sensitive to the device size. Single electron memories with narrow channel MOSFETs also have large characteristics fluctuations. These results indicate that high resolution lithography with very high accuracy is strongly required for future giga-bit level single electron devices. MOSFETs with very narrow channel are also fabricated by electronbeam lithography, and the dependence of size fluctuations and drain current fluctuations on resist material is examined.

Original languageEnglish
Pages (from-to)417-422
Number of pages6
JournalJournal of Photopolymer Science and Technology
Volume12
Issue number3
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Single electron transistors
Electron devices
Lithography
Data storage equipment
Quantum confinement
Drain current
Electrons
Temperature

Keywords

  • EB lithography
  • Memory
  • MOSFET
  • Quantum effects
  • Single electron

ASJC Scopus subject areas

  • Polymers and Plastics
  • Materials Chemistry

Cite this

Highly integrated single electron devices and giga-bit lithography. / Hiramoto, T.; Ishikuro, Hiroki; Majima, H.

In: Journal of Photopolymer Science and Technology, Vol. 12, No. 3, 1999, p. 417-422.

Research output: Contribution to journalArticle

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