Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma

Takehiko Tawara, Tetsu Ito, Takasumi Tanabe, Kouta Tateno, Eiichi Kuramochi, Masaya Notomi, Hidetoshi Nakano

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl 2/HI/Xe mixed plasma. We found that the Cl2/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.

Original languageEnglish
Pages (from-to)L917-L919
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number33-36
DOIs
Publication statusPublished - 2006 Sep 25
Externally publishedYes

Keywords

  • AlGaAs
  • Dry etching
  • HI
  • Photonic crystal
  • Selectivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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