Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma

Takehiko Tawara, Tetsu Ito, Takasumi Tanabe, Kouta Tateno, Eiichi Kuramochi, Masaya Notomi, Hidetoshi Nakano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl 2/HI/Xe mixed plasma. We found that the Cl2/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number33-36
DOIs
Publication statusPublished - 2006
Externally publishedYes

Fingerprint

Photonic crystals
aluminum gallium arsenides
Etching
Crystal structure
etching
photonics
Plasmas
Masks
Electron beams
crystal structure
masks
electron beams
Lattice constants
slabs
selectivity
fine structure
damage
radii
air
Air

Keywords

  • AlGaAs
  • Dry etching
  • HI
  • Photonic crystal
  • Selectivity

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma. / Tawara, Takehiko; Ito, Tetsu; Tanabe, Takasumi; Tateno, Kouta; Kuramochi, Eiichi; Notomi, Masaya; Nakano, Hidetoshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 33-36, 2006.

Research output: Contribution to journalArticle

Tawara, Takehiko ; Ito, Tetsu ; Tanabe, Takasumi ; Tateno, Kouta ; Kuramochi, Eiichi ; Notomi, Masaya ; Nakano, Hidetoshi. / Highly selective ZEP/AlGaAs etching for photonic crystal structures using Cb/HI/Xe mixed plasma. In: Japanese Journal of Applied Physics, Part 2: Letters. 2006 ; Vol. 45, No. 33-36.
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AB - We demonstrate the highly selective etching of AlGaAs photonic crystal (PhC) structures with electron beam (EB) resist masks by using Cl 2/HI/Xe mixed plasma. We found that the Cl2/HI plasma etches the AlGaAs layer while suppressing EB mask etching, and the addition of Xe eliminates damage to the EB mask caused by radicals. With this balanced approach, we achieved a 3-fold increase in the etching selectivity of the etching rate ratio of AlGaAs/resist. Moreover, using these conditions we successfully fabricated an AlGaAs PhC slab with a fine structure and very small air holes that had a radius of 48 nm and a lattice constant of 240 nm.

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