Highly sensitive magnetic sensing method using magnetoresitance devices

Hideo Kaiju, Kazuya Saisho, Kazuo Shiiki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A highly sensitive magnetic sensing method using magnetoresistance devices is proposed. An InSb magnetic sensing device was used in the feedback loop of a Hartley oscillator. The oscillation starts when the resistance of the InSb magnetic sensing device changes in the external magnetic field as the oscillation condition is fulfilled. We can detect the magnetic 1 or 0 signal, corresponding to oscillation or nonoscillation, respectively. Output response and error rate in our magnetic sensing for the detection of oscillation were invesitigated. As a result, a high output response of 1 Vpp was obtained even if the electric sensing current which flows into the InSb magnetic sensing device was 450 μA. The resistance change of more than 30 Ω is required in order to maintain an error rate of less than 10-5. Therefore, this magnetic sensing method has potential application in highly sensitive magnetic sensors.

Original languageEnglish
Pages (from-to)5600-5603
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number8 A
DOIs
Publication statusPublished - 2004 Aug 1

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Magnetic sensors
Magnetoresistance
Magnetic fields
Feedback
oscillations
output
oscillators
sensors
magnetic fields

Keywords

  • Feedback loop
  • Hartley oscillator
  • Magnetic sensing method
  • Magnetoresistance effect
  • Sensing current

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Highly sensitive magnetic sensing method using magnetoresitance devices. / Kaiju, Hideo; Saisho, Kazuya; Shiiki, Kazuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 8 A, 01.08.2004, p. 5600-5603.

Research output: Contribution to journalArticle

@article{293d09dbe3944bf48aed55c602679886,
title = "Highly sensitive magnetic sensing method using magnetoresitance devices",
abstract = "A highly sensitive magnetic sensing method using magnetoresistance devices is proposed. An InSb magnetic sensing device was used in the feedback loop of a Hartley oscillator. The oscillation starts when the resistance of the InSb magnetic sensing device changes in the external magnetic field as the oscillation condition is fulfilled. We can detect the magnetic 1 or 0 signal, corresponding to oscillation or nonoscillation, respectively. Output response and error rate in our magnetic sensing for the detection of oscillation were invesitigated. As a result, a high output response of 1 Vpp was obtained even if the electric sensing current which flows into the InSb magnetic sensing device was 450 μA. The resistance change of more than 30 Ω is required in order to maintain an error rate of less than 10-5. Therefore, this magnetic sensing method has potential application in highly sensitive magnetic sensors.",
keywords = "Feedback loop, Hartley oscillator, Magnetic sensing method, Magnetoresistance effect, Sensing current",
author = "Hideo Kaiju and Kazuya Saisho and Kazuo Shiiki",
year = "2004",
month = "8",
day = "1",
doi = "10.1143/JJAP.43.5600",
language = "English",
volume = "43",
pages = "5600--5603",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 A",

}

TY - JOUR

T1 - Highly sensitive magnetic sensing method using magnetoresitance devices

AU - Kaiju, Hideo

AU - Saisho, Kazuya

AU - Shiiki, Kazuo

PY - 2004/8/1

Y1 - 2004/8/1

N2 - A highly sensitive magnetic sensing method using magnetoresistance devices is proposed. An InSb magnetic sensing device was used in the feedback loop of a Hartley oscillator. The oscillation starts when the resistance of the InSb magnetic sensing device changes in the external magnetic field as the oscillation condition is fulfilled. We can detect the magnetic 1 or 0 signal, corresponding to oscillation or nonoscillation, respectively. Output response and error rate in our magnetic sensing for the detection of oscillation were invesitigated. As a result, a high output response of 1 Vpp was obtained even if the electric sensing current which flows into the InSb magnetic sensing device was 450 μA. The resistance change of more than 30 Ω is required in order to maintain an error rate of less than 10-5. Therefore, this magnetic sensing method has potential application in highly sensitive magnetic sensors.

AB - A highly sensitive magnetic sensing method using magnetoresistance devices is proposed. An InSb magnetic sensing device was used in the feedback loop of a Hartley oscillator. The oscillation starts when the resistance of the InSb magnetic sensing device changes in the external magnetic field as the oscillation condition is fulfilled. We can detect the magnetic 1 or 0 signal, corresponding to oscillation or nonoscillation, respectively. Output response and error rate in our magnetic sensing for the detection of oscillation were invesitigated. As a result, a high output response of 1 Vpp was obtained even if the electric sensing current which flows into the InSb magnetic sensing device was 450 μA. The resistance change of more than 30 Ω is required in order to maintain an error rate of less than 10-5. Therefore, this magnetic sensing method has potential application in highly sensitive magnetic sensors.

KW - Feedback loop

KW - Hartley oscillator

KW - Magnetic sensing method

KW - Magnetoresistance effect

KW - Sensing current

UR - http://www.scopus.com/inward/record.url?scp=6344223309&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344223309&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.5600

DO - 10.1143/JJAP.43.5600

M3 - Article

AN - SCOPUS:6344223309

VL - 43

SP - 5600

EP - 5603

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 A

ER -