We report on the two spectral holes in the photocurrent of InAs self-assembled quantum dots (SAQDs) embedded in a pin diode irradiated by two different lasers. The estimated homogeneous broadening (Γh) of 25 μeV for InAs SAQDs implies the possibility of high-density multiple wavelength-domain optical memory with the ratio of inhomogeneous broadening to Γh larger than 3300. The dependence of writing power, electric field, and temperature on the Γh was also investigated using hole burning spectroscopy. The Γh broadened not only as the writing power increased over a few W/cm2 but also as the applied field increased. The Γh showed linear dependence on temperature, and the spectral hole was observed up to 80 K.
|Number of pages||5|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2000 May|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics