Homogeneous linewidth broadening in a In0.5Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope

K. Matsuda, K. Ikeda, T. Saiki, H. Tsuchiya, H. Saito, K. Nishi

Research output: Contribution to journalArticlepeer-review

70 Citations (Scopus)

Abstract

We have studied the spectral homogeneous broadening of self-assembled In0.5Ga0.5As single quantum dots in a high-temperature regime with a highly sensitive near-field scanning optical microscope. Through precise examination of the photoluminescence spectra under weak excitation conditions, the homogeneous linewidth of the quantum dot was estimated to be about 12 meV at 300 K. We also found that the homogeneous linewidth changes with the interlevel spacing energy. It is shown that these experimental results on the homogeneous linewidths are well explained by means of a theoretical model considering the electron-longitudinal optical phonon and electron-longitudinal acoustic phonon interactions.

Original languageEnglish
Article number121304
Pages (from-to)1213041-1213044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number12
Publication statusPublished - 2001 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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