Homogeneous linewidth broadening in a In0.5Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope

K. Matsuda, K. Ikeda, Toshiharu Saiki, H. Tsuchiya, H. Saito, K. Nishi

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

We have studied the spectral homogeneous broadening of self-assembled In0.5Ga0.5As single quantum dots in a high-temperature regime with a highly sensitive near-field scanning optical microscope. Through precise examination of the photoluminescence spectra under weak excitation conditions, the homogeneous linewidth of the quantum dot was estimated to be about 12 meV at 300 K. We also found that the homogeneous linewidth changes with the interlevel spacing energy. It is shown that these experimental results on the homogeneous linewidths are well explained by means of a theoretical model considering the electron-longitudinal optical phonon and electron-longitudinal acoustic phonon interactions.

Original languageEnglish
Article number121304
Pages (from-to)1213041-1213044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number12
Publication statusPublished - 2001
Externally publishedYes

Fingerprint

optical microscopes
Linewidth
Semiconductor quantum dots
near fields
Microscopes
quantum dots
Scanning
scanning
room temperature
electrons
Electrons
examination
spacing
photoluminescence
Temperature
acoustics
Photoluminescence
Acoustics
excitation
interactions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Homogeneous linewidth broadening in a In0.5Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope. / Matsuda, K.; Ikeda, K.; Saiki, Toshiharu; Tsuchiya, H.; Saito, H.; Nishi, K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 12, 121304, 2001, p. 1213041-1213044.

Research output: Contribution to journalArticle

@article{fcc6277b334f45fb9ff1710415efab4e,
title = "Homogeneous linewidth broadening in a In0.5Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope",
abstract = "We have studied the spectral homogeneous broadening of self-assembled In0.5Ga0.5As single quantum dots in a high-temperature regime with a highly sensitive near-field scanning optical microscope. Through precise examination of the photoluminescence spectra under weak excitation conditions, the homogeneous linewidth of the quantum dot was estimated to be about 12 meV at 300 K. We also found that the homogeneous linewidth changes with the interlevel spacing energy. It is shown that these experimental results on the homogeneous linewidths are well explained by means of a theoretical model considering the electron-longitudinal optical phonon and electron-longitudinal acoustic phonon interactions.",
author = "K. Matsuda and K. Ikeda and Toshiharu Saiki and H. Tsuchiya and H. Saito and K. Nishi",
year = "2001",
language = "English",
volume = "63",
pages = "1213041--1213044",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "12",

}

TY - JOUR

T1 - Homogeneous linewidth broadening in a In0.5Ga0.5As/GaAs single quantum dot at room temperature investigated using a highly sensitive near-field scanning optical microscope

AU - Matsuda, K.

AU - Ikeda, K.

AU - Saiki, Toshiharu

AU - Tsuchiya, H.

AU - Saito, H.

AU - Nishi, K.

PY - 2001

Y1 - 2001

N2 - We have studied the spectral homogeneous broadening of self-assembled In0.5Ga0.5As single quantum dots in a high-temperature regime with a highly sensitive near-field scanning optical microscope. Through precise examination of the photoluminescence spectra under weak excitation conditions, the homogeneous linewidth of the quantum dot was estimated to be about 12 meV at 300 K. We also found that the homogeneous linewidth changes with the interlevel spacing energy. It is shown that these experimental results on the homogeneous linewidths are well explained by means of a theoretical model considering the electron-longitudinal optical phonon and electron-longitudinal acoustic phonon interactions.

AB - We have studied the spectral homogeneous broadening of self-assembled In0.5Ga0.5As single quantum dots in a high-temperature regime with a highly sensitive near-field scanning optical microscope. Through precise examination of the photoluminescence spectra under weak excitation conditions, the homogeneous linewidth of the quantum dot was estimated to be about 12 meV at 300 K. We also found that the homogeneous linewidth changes with the interlevel spacing energy. It is shown that these experimental results on the homogeneous linewidths are well explained by means of a theoretical model considering the electron-longitudinal optical phonon and electron-longitudinal acoustic phonon interactions.

UR - http://www.scopus.com/inward/record.url?scp=0034895723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034895723&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0034895723

VL - 63

SP - 1213041

EP - 1213044

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 12

M1 - 121304

ER -