Homogeneous linewidth study of a single In0.5Ga0.5As quantum dot at high temperature by using near-field scanning optical microscope

Kazunari Matsuda, Toshiharu Saiki, Hideaki Tsuchiya, Hideaki Saito, Kenichi Nishi

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The photoluminescence spectroscopy of single quantum dots at room temperature was performed with a near-field scanning optical microscope. We measured temperature dependence of PL linewidth and discussed the mechanism of its broadening.

Original languageEnglish
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
PublisherIEEE
Pages278-279
Number of pages2
Publication statusPublished - 2000
Externally publishedYes
EventQuantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA
Duration: 2000 May 72000 May 12

Other

OtherQuantum Electronics and Laser Science Conference (QELS 2000)
CitySan Francisco, CA, USA
Period00/5/700/5/12

Fingerprint

optical microscopes
near fields
quantum dots
photoluminescence
temperature dependence
scanning
room temperature
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Matsuda, K., Saiki, T., Tsuchiya, H., Saito, H., & Nishi, K. (2000). Homogeneous linewidth study of a single In0.5Ga0.5As quantum dot at high temperature by using near-field scanning optical microscope. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (pp. 278-279). IEEE.

Homogeneous linewidth study of a single In0.5Ga0.5As quantum dot at high temperature by using near-field scanning optical microscope. / Matsuda, Kazunari; Saiki, Toshiharu; Tsuchiya, Hideaki; Saito, Hideaki; Nishi, Kenichi.

Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE, 2000. p. 278-279.

Research output: Chapter in Book/Report/Conference proceedingChapter

Matsuda, K, Saiki, T, Tsuchiya, H, Saito, H & Nishi, K 2000, Homogeneous linewidth study of a single In0.5Ga0.5As quantum dot at high temperature by using near-field scanning optical microscope. in Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE, pp. 278-279, Quantum Electronics and Laser Science Conference (QELS 2000), San Francisco, CA, USA, 00/5/7.
Matsuda K, Saiki T, Tsuchiya H, Saito H, Nishi K. Homogeneous linewidth study of a single In0.5Ga0.5As quantum dot at high temperature by using near-field scanning optical microscope. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE. 2000. p. 278-279
Matsuda, Kazunari ; Saiki, Toshiharu ; Tsuchiya, Hideaki ; Saito, Hideaki ; Nishi, Kenichi. / Homogeneous linewidth study of a single In0.5Ga0.5As quantum dot at high temperature by using near-field scanning optical microscope. Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series. IEEE, 2000. pp. 278-279
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