Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga

K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, J. Emes, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, V. I. Ozhogin

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

Original languageEnglish
Pages (from-to)4058-4061
Number of pages4
JournalPhysical review letters
Volume77
Issue number19
DOIs
Publication statusPublished - 1996 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped <sup>70</sup>Ge:Ga'. Together they form a unique fingerprint.

  • Cite this

    Itoh, K. M., Haller, E. E., Beeman, J. W., Hansen, W. L., Emes, J., Reichertz, L. A., Kreysa, E., Shutt, T., Cummings, A., Stockwell, W., Sadoulet, B., Muto, J., Farmer, J. W., & Ozhogin, V. I. (1996). Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga. Physical review letters, 77(19), 4058-4061. https://doi.org/10.1103/PhysRevLett.77.4058