Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga

K. M. Itoh; E. E. Haller; J. W. Beeman; W. L. Hansen; J. Emes; L. A. Reichertz; E. Kreysa; T. Shutt; A. Cummings; W. Stockwell; B. Sadoulet; J. Muto; J. W. Farmer; V. I. Ozhogin

doi:10.1103/PhysRevLett.77.4058

Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped ⁷⁰Ge:Ga

K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, J. Emes, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, V. I. Ozhogin

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Abstract

We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched ⁷⁰Ge:Ga samples with the Ga concentration [Ga] near N_c for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T₀/T)^½ with T₀α(N_c − [Ga])/N_c while the zero temperature conductivity σ(0)of the metallic samples is T₀α(([Ga] −N_c)/N_c))^ν with the critical exponent ν ≈ 5. The values of N_c obtained from the two independent scalings of T₀ and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

Original language	English
Pages (from-to)	4058-4061
Number of pages	4
Journal	Physical review letters
Volume	77
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.77.4058
Publication status	Published - 1996

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Physics and Astronomy(all)

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Itoh, K. M., Haller, E. E., Beeman, J. W., Hansen, W. L., Emes, J., Reichertz, L. A., Kreysa, E., Shutt, T., Cummings, A., Stockwell, W., Sadoulet, B., Muto, J., Farmer, J. W., & Ozhogin, V. I. (1996). Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped ⁷⁰Ge:Ga. Physical review letters, 77(19), 4058-4061. https://doi.org/10.1103/PhysRevLett.77.4058

Itoh, KM, Haller, EE, Beeman, JW, Hansen, WL, Emes, J, Reichertz, LA, Kreysa, E, Shutt, T, Cummings, A, Stockwell, W, Sadoulet, B, Muto, J, Farmer, JW & Ozhogin, VI 1996, 'Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped ⁷⁰Ge:Ga', Physical review letters, vol. 77, no. 19, pp. 4058-4061. https://doi.org/10.1103/PhysRevLett.77.4058

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title = "Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga",

abstract = "We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.",

author = "Itoh, {K. M.} and Haller, {E. E.} and Beeman, {J. W.} and Hansen, {W. L.} and J. Emes and Reichertz, {L. A.} and E. Kreysa and T. Shutt and A. Cummings and W. Stockwell and B. Sadoulet and J. Muto and Farmer, {J. W.} and Ozhogin, {V. I.}",

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doi = "10.1103/PhysRevLett.77.4058",

language = "English",

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T1 - Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge:Ga

AU - Itoh, K. M.

AU - Haller, E. E.

AU - Beeman, J. W.

AU - Hansen, W. L.

AU - Emes, J.

AU - Reichertz, L. A.

AU - Kreysa, E.

AU - Shutt, T.

AU - Cummings, A.

AU - Stockwell, W.

AU - Sadoulet, B.

AU - Muto, J.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

PY - 1996

Y1 - 1996

N2 - We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

AB - We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition. σ of all insulating samples obeys lnσα−(T0/T)½ with T0α(Nc − [Ga])/Nc while the zero temperature conductivity σ(0)of the metallic samples is T0α(([Ga] −Nc)/Nc))ν with the critical exponent ν ≈ 5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ½ ≈ 5 is established unambiguously for uncompensated Ge:Ga.

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JO - Physical Review Letters

JF - Physical Review Letters

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Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped ⁷⁰Ge:Ga

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