Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge: Ga

Kohei M Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, J. Emes, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer, V. I. Ozhogin

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Abstract

We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition, σ of all insulating samples obeys In σ ∝ -(T0/T)1/2 with T0 ∝ (Nc-[Ga])/Nc while the zero temperature conductivity σ(0) of the metallic samples is σ(0) ∝ {([Ga]-Nc)/Nc}ν with the critical exponent ν ≈ 0.5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ν ≈ 0.5 is established unambiguously for uncompensated Ge:Ga.

Original languageEnglish
Pages (from-to)4058-4061
Number of pages4
JournalPhysical Review Letters
Volume77
Issue number19
Publication statusPublished - 1996

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nuclear reactions
insulators
conduction
metals
exponents
scaling
conductivity
electrical resistivity
temperature

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  • Physics and Astronomy(all)

Cite this

Itoh, K. M., Haller, E. E., Beeman, J. W., Hansen, W. L., Emes, J., Reichertz, L. A., ... Ozhogin, V. I. (1996). Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge: Ga. Physical Review Letters, 77(19), 4058-4061.

Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge : Ga. / Itoh, Kohei M; Haller, E. E.; Beeman, J. W.; Hansen, W. L.; Emes, J.; Reichertz, L. A.; Kreysa, E.; Shutt, T.; Cummings, A.; Stockwell, W.; Sadoulet, B.; Muto, J.; Farmer, J. W.; Ozhogin, V. I.

In: Physical Review Letters, Vol. 77, No. 19, 1996, p. 4058-4061.

Research output: Contribution to journalArticle

Itoh, KM, Haller, EE, Beeman, JW, Hansen, WL, Emes, J, Reichertz, LA, Kreysa, E, Shutt, T, Cummings, A, Stockwell, W, Sadoulet, B, Muto, J, Farmer, JW & Ozhogin, VI 1996, 'Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge: Ga', Physical Review Letters, vol. 77, no. 19, pp. 4058-4061.
Itoh, Kohei M ; Haller, E. E. ; Beeman, J. W. ; Hansen, W. L. ; Emes, J. ; Reichertz, L. A. ; Kreysa, E. ; Shutt, T. ; Cummings, A. ; Stockwell, W. ; Sadoulet, B. ; Muto, J. ; Farmer, J. W. ; Ozhogin, V. I. / Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge : Ga. In: Physical Review Letters. 1996 ; Vol. 77, No. 19. pp. 4058-4061.
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T1 - Hopping conduction and metal-insulator transition in isotopically enriched neutron-transmutation-doped 70Ge

T2 - Ga

AU - Itoh, Kohei M

AU - Haller, E. E.

AU - Beeman, J. W.

AU - Hansen, W. L.

AU - Emes, J.

AU - Reichertz, L. A.

AU - Kreysa, E.

AU - Shutt, T.

AU - Cummings, A.

AU - Stockwell, W.

AU - Sadoulet, B.

AU - Muto, J.

AU - Farmer, J. W.

AU - Ozhogin, V. I.

PY - 1996

Y1 - 1996

N2 - We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition, σ of all insulating samples obeys In σ ∝ -(T0/T)1/2 with T0 ∝ (Nc-[Ga])/Nc while the zero temperature conductivity σ(0) of the metallic samples is σ(0) ∝ {([Ga]-Nc)/Nc}ν with the critical exponent ν ≈ 0.5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ν ≈ 0.5 is established unambiguously for uncompensated Ge:Ga.

AB - We report on the electrical conductivity σ of a series of nominally uncompensated neutron-transmutation-doped isotopically enriched 70Ge:Ga samples with the Ga concentration [Ga] near Nc for the metal-insulator transition, σ of all insulating samples obeys In σ ∝ -(T0/T)1/2 with T0 ∝ (Nc-[Ga])/Nc while the zero temperature conductivity σ(0) of the metallic samples is σ(0) ∝ {([Ga]-Nc)/Nc}ν with the critical exponent ν ≈ 0.5. The values of Nc obtained from the two independent scalings of T0 and σ(0) are identical, i.e., ν ≈ 0.5 is established unambiguously for uncompensated Ge:Ga.

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