Hopping transport in multiple-dot silicon single electron MOSFET

Hiroki Ishikuro, Toshiro Hiramoto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The transport properties in multiple-dot single electron MOSFETs have been investigated by numerical calculation solving the master equation. In multiple-dot single electron devices, the capacitive coupling effects play an important role in the electron transport. The calculation shows that the transport in the multiple-dot system is governed by the phonon assisted hopping if the single electron charging energy and coupling energy are larger than the thermal energy. The result is in good agreement with the experimental results of silicon narrow channel MOSFETs and confirms the hopping transport model in the multiple-dot system we proposed in our previous paper.

Original languageEnglish
Pages (from-to)1425-1428
Number of pages4
JournalSolid-State Electronics
Volume42
Issue number7-8
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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