Host isotope effect on the local vibration modes of VH2 and VOH2 defects in isotopically enriched28Si, 29Si and30Si single crystals

Takeru Ohya, Kohei M Itoh, Rui N. Pereira, Brian Bech Nielsen

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.

Original languageEnglish
Pages (from-to)7309-7313
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number10
DOIs
Publication statusPublished - 2005 Oct 11

Fingerprint

isotope effect
Isotopes
vibration mode
Single crystals
Atoms
Defects
Vacancies
hydrogen atoms
single crystals
defects
Silicon
Hydrogen
Infrared absorption
silicon
Absorption spectroscopy
infrared absorption
Infrared spectroscopy
absorption spectroscopy
infrared spectroscopy
oscillators

Keywords

  • Defect
  • Infrared spectroscopy
  • Isotope engineering
  • Local vibrational mode
  • Oxygen
  • Silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.",
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T1 - Host isotope effect on the local vibration modes of VH2 and VOH2 defects in isotopically enriched28Si, 29Si and30Si single crystals

AU - Ohya, Takeru

AU - Itoh, Kohei M

AU - Pereira, Rui N.

AU - Nielsen, Brian Bech

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N2 - Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.

AB - Local vibrational modes of a vacancy with two hydrogen atoms (VH 2) and of a vacancy with one oxygen and two-hydrogen atoms (VOH 2) in silicon have been investigated using isotopically enriched 28Si, 29Si, and 30Si single crystals. Infrared absorption spectroscopy revealed shifts in the Si-H stretch frequencies of the two defects when the mass of the silicon host atoms was changed. The observed stretch frequencies can for each defect be accounted for with a simple vibrational model based on two coupled Morse oscillators. The anharmonic contribution to the local vibrational mode frequencies of these two defects is evaluated.

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KW - Infrared spectroscopy

KW - Isotope engineering

KW - Local vibrational mode

KW - Oxygen

KW - Silicon

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