Abstract
Ti and Al powders were mixed with identical atomic ratios and hot-pressed at 650, 800, 950, 1100 and 1250 °C, respectively, for the use of targets in the arc ion plating (AIP) method. As the sintering temperatures increased, the target density monotonously increased and the porosity correspondingly decreased. Chemical analysis by X-ray diffraction indicated that pure Ti and Al phases decreased and intermetallics such as TiAl3 and Ti3Al phases were formed at 800-950 °C. Over 950 °C, the amount of the intermetallics decreased and finally TiAl phase was formed. Next, the Ti-Al targets were arc-discharged in nitrogen plasma and Ti1-xAlxN films were deposited on mirror-polished cemented carbide substrates. The targets with lower density, sintered at 650 and 800 °C, did not easily trigger and keep stable arc-discharge during the deposition. As a result, synthesized Ti1-xAlxN films had a larger number and size of droplets which were not only circular but were also irregular shapes. Although microstructures of Ti-Al targets were quite different, all films mostly consisted of Ti0.5Al0.5N with the NaCl structure and similar hardness with approximately 3000 HV. Further, all Ti0.5Al0.5N films had the same columnar cross-sectional structures and the growth rate was approximately 17 μm/h.
Original language | English |
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Pages (from-to) | 101-105 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 382 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2001 Feb 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry