Abstract
Ti and Al powders were mixed with identical atomic ratios and hot-pressed at 650, 800, 950, 1100 and 1250 °C, respectively, for the use of targets in the arc ion plating (AIP) method. As the sintering temperatures increased, the target density monotonously increased and the porosity correspondingly decreased. Chemical analysis by X-ray diffraction indicated that pure Ti and Al phases decreased and intermetallics such as TiAl3 and Ti3Al phases were formed at 800-950 °C. Over 950 °C, the amount of the intermetallics decreased and finally TiAl phase was formed. Next, the Ti-Al targets were arc-discharged in nitrogen plasma and Ti1-xAlxN films were deposited on mirror-polished cemented carbide substrates. The targets with lower density, sintered at 650 and 800 °C, did not easily trigger and keep stable arc-discharge during the deposition. As a result, synthesized Ti1-xAlxN films had a larger number and size of droplets which were not only circular but were also irregular shapes. Although microstructures of Ti-Al targets were quite different, all films mostly consisted of Ti0.5Al0.5N with the NaCl structure and similar hardness with approximately 3000 HV. Further, all Ti0.5Al0.5N films had the same columnar cross-sectional structures and the growth rate was approximately 17 μm/h.
| Original language | English |
|---|---|
| Pages (from-to) | 101-105 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 382 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2001 Feb 1 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Hot-pressed Ti-Al targets for synthesizing Ti1-xAlxN films by the arc ion plating method. / Kimura, Ayako; Murakami, Tomohiro; Yamada, Kunihiro; Suzuki, Tetsuya.
In: Thin Solid Films, Vol. 382, No. 1-2, 01.02.2001, p. 101-105.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Hot-pressed Ti-Al targets for synthesizing Ti1-xAlxN films by the arc ion plating method
AU - Kimura, Ayako
AU - Murakami, Tomohiro
AU - Yamada, Kunihiro
AU - Suzuki, Tetsuya
PY - 2001/2/1
Y1 - 2001/2/1
N2 - Ti and Al powders were mixed with identical atomic ratios and hot-pressed at 650, 800, 950, 1100 and 1250 °C, respectively, for the use of targets in the arc ion plating (AIP) method. As the sintering temperatures increased, the target density monotonously increased and the porosity correspondingly decreased. Chemical analysis by X-ray diffraction indicated that pure Ti and Al phases decreased and intermetallics such as TiAl3 and Ti3Al phases were formed at 800-950 °C. Over 950 °C, the amount of the intermetallics decreased and finally TiAl phase was formed. Next, the Ti-Al targets were arc-discharged in nitrogen plasma and Ti1-xAlxN films were deposited on mirror-polished cemented carbide substrates. The targets with lower density, sintered at 650 and 800 °C, did not easily trigger and keep stable arc-discharge during the deposition. As a result, synthesized Ti1-xAlxN films had a larger number and size of droplets which were not only circular but were also irregular shapes. Although microstructures of Ti-Al targets were quite different, all films mostly consisted of Ti0.5Al0.5N with the NaCl structure and similar hardness with approximately 3000 HV. Further, all Ti0.5Al0.5N films had the same columnar cross-sectional structures and the growth rate was approximately 17 μm/h.
AB - Ti and Al powders were mixed with identical atomic ratios and hot-pressed at 650, 800, 950, 1100 and 1250 °C, respectively, for the use of targets in the arc ion plating (AIP) method. As the sintering temperatures increased, the target density monotonously increased and the porosity correspondingly decreased. Chemical analysis by X-ray diffraction indicated that pure Ti and Al phases decreased and intermetallics such as TiAl3 and Ti3Al phases were formed at 800-950 °C. Over 950 °C, the amount of the intermetallics decreased and finally TiAl phase was formed. Next, the Ti-Al targets were arc-discharged in nitrogen plasma and Ti1-xAlxN films were deposited on mirror-polished cemented carbide substrates. The targets with lower density, sintered at 650 and 800 °C, did not easily trigger and keep stable arc-discharge during the deposition. As a result, synthesized Ti1-xAlxN films had a larger number and size of droplets which were not only circular but were also irregular shapes. Although microstructures of Ti-Al targets were quite different, all films mostly consisted of Ti0.5Al0.5N with the NaCl structure and similar hardness with approximately 3000 HV. Further, all Ti0.5Al0.5N films had the same columnar cross-sectional structures and the growth rate was approximately 17 μm/h.
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U2 - 10.1016/S0040-6090(00)01692-8
DO - 10.1016/S0040-6090(00)01692-8
M3 - Article
AN - SCOPUS:0034823477
VL - 382
SP - 101
EP - 105
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -