GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.
ASJC Scopus subject areas
- Electrical and Electronic Engineering