Abstract
GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.
| Original language | English |
|---|---|
| Pages (from-to) | 1352-1353 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 34 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 1998 Jun 25 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Nakahara, T., Tsuda, H., Tateno, K., Matsuo, S., & Kurokawa, T. (1998). Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits. Electronics Letters, 34(13), 1352-1353. https://doi.org/10.1049/el:19980928