Abstract
GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.
Original language | English |
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Pages (from-to) | 1352-1353 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 34 |
Issue number | 13 |
DOIs | |
Publication status | Published - 1998 Jun 25 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering