Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

T. Nakahara, H. Tsuda, K. Tateno, S. Matsuo, T. Kurokawa

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

Original languageEnglish
Pages (from-to)1352-1353
Number of pages2
JournalElectronics Letters
Volume34
Issue number13
DOIs
Publication statusPublished - 1998 Jun 25
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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