Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

T. Nakahara; H. Tsuda; K. Tateno; S. Matsuo; T. Kurokawa

doi:10.1049/el:19980928

Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

T. Nakahara, H. Tsuda, K. Tateno, S. Matsuo, T. Kurokawa

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

Original language	English
Pages (from-to)	1352-1353
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	13
DOIs	https://doi.org/10.1049/el:19980928
Publication status	Published - 1998 Jun 25
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19980928

Cite this

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title = "Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits",

abstract = "GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.",

author = "T. Nakahara and H. Tsuda and K. Tateno and S. Matsuo and T. Kurokawa",

year = "1998",

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AU - Nakahara, T.

AU - Tsuda, H.

AU - Tateno, K.

AU - Matsuo, S.

AU - Kurokawa, T.

PY - 1998/6/25

Y1 - 1998/6/25

N2 - GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

AB - GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

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Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

Abstract

ASJC Scopus subject areas

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