Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

T. Nakahara; H. Tsuda; K. Tateno; S. Matsuo; T. Kurokawa

doi:10.1049/el:19980928

Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

T. Nakahara, H. Tsuda, K. Tateno, S. Matsuo, T. Kurokawa

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

Original language	English
Pages (from-to)	1352-1353
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	13
DOIs	https://doi.org/10.1049/el:19980928
Publication status	Published - 1998 Jun 25
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19980928

Cite this

@article{1ebf445fba194510a6b267d813dcc5de,

title = "Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits",

abstract = "GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.",

author = "T. Nakahara and H. Tsuda and K. Tateno and S. Matsuo and T. Kurokawa",

year = "1998",

month = jun,

day = "25",

doi = "10.1049/el:19980928",

language = "English",

volume = "34",

pages = "1352--1353",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "13",

}

TY - JOUR

T1 - Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

AU - Nakahara, T.

AU - Tsuda, H.

AU - Tateno, K.

AU - Matsuo, S.

AU - Kurokawa, T.

PY - 1998/6/25

Y1 - 1998/6/25

N2 - GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

AB - GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polyimide bonding. The capacitance of the integrated photodiode was 50fF, which included almost no parasitics. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800Mbit/s.

UR - http://www.scopus.com/inward/record.url?scp=0032089765&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032089765&partnerID=8YFLogxK

U2 - 10.1049/el:19980928

DO - 10.1049/el:19980928

M3 - Article

AN - SCOPUS:0032089765

VL - 34

SP - 1352

EP - 1353

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 13

ER -

Hybrid integration of GaAs pin-phptodiodes with CMOS transimpedance amplifier circuits

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this