TY - GEN
T1 - Hybrid Integration of Smart Pixel with Vertical-cavity Surface-emitting Laser Using Polyimide Bonding
AU - Matsuo, Shinji
AU - Nakahara, T.
AU - Tateno, K.
AU - Tsuda, H.
AU - Kurokawa, T.
N1 - Funding Information:
We would like to thank Hidetoshi Iwamura. Takashi Tadokoro, and Yoshitaka Ohiso for their stimulating discussions, and Toru Kodaira for the device fabrication.
Publisher Copyright:
© 1997 Optical Society of America.
PY - 1997
Y1 - 1997
N2 - We have developed a new three-dimensional integration technology which involves hybrid integration of photonic and electronic circuits by means of polyimide bonding. To demonstrate this technology, a vertical-cavity surface-emitting laser (VCSEL) and metal-semiconductor-metal photodetector arrays were fabricated on a Si substrate. The photoresponsivity of the photodetector was 0.3 AAV. The threshold current of the VCSEL was 3.1 mA and the maximum output power was 2.45 mW for a 15-μm-diameter mesa at 20 °C. The VCSEL was not lasing above 90 °C. The calculation shows the thermal resistance for the proposed hybrid structure strongly depends on the polyimide thickness. The difference in active layer temperature between the hybrid and monolithic structures is within 10 K when the thickness of the polyimide is less than 0.1 μm and the electrical power consumption is 30 mW. We also calculated the power consumption and the maximum number of pixels per chip. A lower threshold current of the VCSELs and a lower bias voltage to the Si-CMOS circuit are desired to obtain a higher I/O throughput device.
AB - We have developed a new three-dimensional integration technology which involves hybrid integration of photonic and electronic circuits by means of polyimide bonding. To demonstrate this technology, a vertical-cavity surface-emitting laser (VCSEL) and metal-semiconductor-metal photodetector arrays were fabricated on a Si substrate. The photoresponsivity of the photodetector was 0.3 AAV. The threshold current of the VCSEL was 3.1 mA and the maximum output power was 2.45 mW for a 15-μm-diameter mesa at 20 °C. The VCSEL was not lasing above 90 °C. The calculation shows the thermal resistance for the proposed hybrid structure strongly depends on the polyimide thickness. The difference in active layer temperature between the hybrid and monolithic structures is within 10 K when the thickness of the polyimide is less than 0.1 μm and the electrical power consumption is 30 mW. We also calculated the power consumption and the maximum number of pixels per chip. A lower threshold current of the VCSELs and a lower bias voltage to the Si-CMOS circuit are desired to obtain a higher I/O throughput device.
KW - Integrated optoelectronic circuits
KW - Optical interconnects
KW - Smart pixels
KW - Vertical cavity surface emitting lasers
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M3 - Conference contribution
AN - SCOPUS:85135625866
T3 - Optics InfoBase Conference Papers
SP - 39
EP - 46
BT - Spatial Light Modulators, SLM 1997
PB - Optica Publishing Group (formerly OSA)
T2 - Spatial Light Modulators, SLM 1997
Y2 - 17 March 1997 through 19 March 1997
ER -