Hybrid integration of smart pixels by using polyimide bonding: Demonstration of a GaAs p-i-n photodiode/CMOS receiver

Tatsushi Nakahara, Hiroyuki Tsuda, Kouta Tateno, Shinji Matsuo, Takashi Kurokawa

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels. And 16×16 and 2×2 banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated errorfree at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated.

Original languageEnglish
Pages (from-to)209-216
Number of pages8
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume5
Issue number2
DOIs
Publication statusPublished - 1999 Mar
Externally publishedYes

Fingerprint

Photodiodes
polyimides
Polyimides
photodiodes
CMOS
Demonstrations
receivers
Pixels
pixels
chips
Surface emitting lasers
surface emitting lasers
Networks (circuits)
switches
Switches
Photonic devices
cavities
transmitter receivers
Photodetectors
Transceivers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Hybrid integration of smart pixels by using polyimide bonding : Demonstration of a GaAs p-i-n photodiode/CMOS receiver. / Nakahara, Tatsushi; Tsuda, Hiroyuki; Tateno, Kouta; Matsuo, Shinji; Kurokawa, Takashi.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 5, No. 2, 03.1999, p. 209-216.

Research output: Contribution to journalArticle

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