Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface

T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, T. Sekiguchi, Kohei M Itoh

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12 Citations (Scopus)

Abstract

A paramagnetic recombination center having an orthorhombic symmetry with g[110]= 2.0095(2), g[001]= 2.0038(2), and g [̄110]= 2.0029(2) is found at the interface between silicon and native oxide. The center is referred to P m center and observed by a spin dependent recombination based electron paramagnetic resonance detection that has the sensitivity of ∼10 11 spins/cm 2. The employment of an isotopically enriched 28Si sample with the concentration of 29Si nuclear spins reduced to 0.017% leads to narrowing of the resonance line. This narrowing is the key for the accurate determination of the angular dependence of the g-factor.

Original languageEnglish
Article number152107
JournalApplied Physics Letters
Volume100
Issue number15
DOIs
Publication statusPublished - 2012 Apr 9

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silicon dioxide
silicon
silicon oxides
resonance lines
nuclear spin
electron paramagnetic resonance
oxides
sensitivity
symmetry

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface. / Matsuoka, T.; Vlasenko, L. S.; Vlasenko, M. P.; Sekiguchi, T.; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 100, No. 15, 152107, 09.04.2012.

Research output: Contribution to journalArticle

Matsuoka, T. ; Vlasenko, L. S. ; Vlasenko, M. P. ; Sekiguchi, T. ; Itoh, Kohei M. / Identification of a paramagnetic recombination center in silicon/silicon-dioxide interface. In: Applied Physics Letters. 2012 ; Vol. 100, No. 15.
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