Identification of boron clusters in silicon crystal by B1s core-level X-ray photoelectron spectroscopy

A first-principles study

Jun Yamauchi, Yoshihide Yoshimoto, Yuji Suwa

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We carried out a comprehensive study on the B1s core-level X-ray photoelectron spectroscopy (XPS) binding energies for B clusters in crystalline Si using a first-principles calculation with careful evaluation of the local potential boundary condition for the model system, where convergence within 0.1 eV was confirmed for the supercell size. For ion-implanted samples, we identified experimental peaks due to B clusters and threefold B as icosahedral B12 and 〈001〉B-Si defects, respectively. For as-doped samples prepared by plasma doping, it was found that the calculated XPS binding energies for complexes of vacancies and B atoms were consistent with the experimental spectra.

Original languageEnglish
Article number191901
JournalApplied Physics Letters
Volume99
Issue number19
DOIs
Publication statusPublished - 2011 Nov 7

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boron
binding energy
photoelectron spectroscopy
silicon
crystals
x rays
boundary conditions
evaluation
defects
atoms
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Identification of boron clusters in silicon crystal by B1s core-level X-ray photoelectron spectroscopy : A first-principles study. / Yamauchi, Jun; Yoshimoto, Yoshihide; Suwa, Yuji.

In: Applied Physics Letters, Vol. 99, No. 19, 191901, 07.11.2011.

Research output: Contribution to journalArticle

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