Abstract
A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.
| Original language | English |
|---|---|
| Article number | 111601 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2013 Sep 9 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Otsuka, M., Matsuoka, T., Vlasenko, L. S., Vlasenko, M. P., & Itoh, K. M. (2013). Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces. Applied Physics Letters, 103(11), [111601]. https://doi.org/10.1063/1.4820824