Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces

M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, Kohei M Itoh

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

Original languageEnglish
Article number111601
JournalApplied Physics Letters
Volume103
Issue number11
DOIs
Publication statusPublished - 2013 Sep 9

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electron paramagnetic resonance
oxides
resonance lines
heat treatment
defects
symmetry
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces. / Otsuka, M.; Matsuoka, T.; Vlasenko, L. S.; Vlasenko, M. P.; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 103, No. 11, 111601, 09.09.2013.

Research output: Contribution to journal › Article

Otsuka, M, Matsuoka, T, Vlasenko, LS, Vlasenko, MP & Itoh, KM 2013, 'Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces', Applied Physics Letters, vol. 103, no. 11, 111601. https://doi.org/10.1063/1.4820824
Otsuka M, Matsuoka T, Vlasenko LS, Vlasenko MP, Itoh KM. Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces. Applied Physics Letters. 2013 Sep 9;103(11). 111601. https://doi.org/10.1063/1.4820824
Otsuka, M. ; Matsuoka, T. ; Vlasenko, L. S. ; Vlasenko, M. P. ; Itoh, Kohei M. / Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces. In: Applied Physics Letters. 2013 ; Vol. 103, No. 11.
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