Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces

M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, Kohei M Itoh

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

Original languageEnglish
Article number111601
JournalApplied Physics Letters
Volume103
Issue number11
DOIs
Publication statusPublished - 2013 Sep 9

Fingerprint

electron paramagnetic resonance
oxides
resonance lines
heat treatment
defects
symmetry
excitation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces. / Otsuka, M.; Matsuoka, T.; Vlasenko, L. S.; Vlasenko, M. P.; Itoh, Kohei M.

In: Applied Physics Letters, Vol. 103, No. 11, 111601, 09.09.2013.

Research output: Contribution to journalArticle

@article{5d0d90ef3b194427b6f04d9498abc1eb,
title = "Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces",
abstract = "A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.",
author = "M. Otsuka and T. Matsuoka and Vlasenko, {L. S.} and Vlasenko, {M. P.} and Itoh, {Kohei M}",
year = "2013",
month = "9",
day = "9",
doi = "10.1063/1.4820824",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces

AU - Otsuka, M.

AU - Matsuoka, T.

AU - Vlasenko, L. S.

AU - Vlasenko, M. P.

AU - Itoh, Kohei M

PY - 2013/9/9

Y1 - 2013/9/9

N2 - A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

AB - A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

UR - http://www.scopus.com/inward/record.url?scp=84884226330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884226330&partnerID=8YFLogxK

U2 - 10.1063/1.4820824

DO - 10.1063/1.4820824

M3 - Article

AN - SCOPUS:84884226330

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111601

ER -