Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces

M. Otsuka; T. Matsuoka; L. S. Vlasenko; M. P. Vlasenko; K. M. Itoh

doi:10.1063/1.4820824

Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO₂ interfaces

M. Otsuka, T. Matsuoka, L. S. Vlasenko, M. P. Vlasenko, K. M. Itoh

Department of Applied Physics and Physico-Informatics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A recombination center at Si surfaces and Si/SiO₂ interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

Original language	English
Article number	111601
Journal	Applied Physics Letters
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.4820824
Publication status	Published - 2013 Sep 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4820824

Cite this

@article{5d0d90ef3b194427b6f04d9498abc1eb,

title = "Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces",

abstract = "A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.",

author = "M. Otsuka and T. Matsuoka and Vlasenko, {L. S.} and Vlasenko, {M. P.} and Itoh, {K. M.}",

note = "Funding Information: This work was supported in part by CREST-JST, in part by a Grant-in-Aid for Scientific Research and the Project for Developing Innovation Systems of MEXT, and in part by the JSPS Core-to-Core Program.",

year = "2013",

month = sep,

day = "9",

doi = "10.1063/1.4820824",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces

AU - Otsuka, M.

AU - Matsuoka, T.

AU - Vlasenko, L. S.

AU - Vlasenko, M. P.

AU - Itoh, K. M.

N1 - Funding Information: This work was supported in part by CREST-JST, in part by a Grant-in-Aid for Scientific Research and the Project for Developing Innovation Systems of MEXT, and in part by the JSPS Core-to-Core Program.

PY - 2013/9/9

Y1 - 2013/9/9

N2 - A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

AB - A recombination center at Si surfaces and Si/SiO2 interfaces was identified using highly sensitive spin-dependent recombination (SDR) detection of electron paramagnetic resonance (EPR). The defect (Si-KU1) has a spin-triplet (S = 1) state owing to excitation by band-edge light employed in measurement. The Si-KU1 SDR-EPR spectrum exhibits orthorhombic symmetry along two equivalent 110 axes running parallel to the interface, which disappears upon mechanical lapping of the surface oxide or heat treatment above 400 °C. However, removal of surface oxide with diluted HF solution sharpens the Si-KU1 SDR-EPR lines. A plausible structural model of the center responsible for Si-KU1 is presented.

UR - http://www.scopus.com/inward/record.url?scp=84884226330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84884226330&partnerID=8YFLogxK

U2 - 10.1063/1.4820824

DO - 10.1063/1.4820824

M3 - Article

AN - SCOPUS:84884226330

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111601

ER -

Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO₂ interfaces

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this