Imaging of current paths and defects in Al and TiSi interconnects on very-large-scale integrated-circuit chips using near-field optical-probe stimulation and resulting resistance change

K. Nikawa, Toshiharu Saiki, S. Inoue, M. Ohtsu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The optical-beam-induced resistance-change-detection (OBIRCH) method has been improved by using a near-field optical probe as the heat source instead of a laser beam. The near-field OBIRCH method has two advantages over the conventional one: (1) its spatial resolution is higher (50 vs 400 nm) and (2) the optical-probe-induced resistance change caused by heating can be observed using a metallized probe without interference from a photocurrent created by electron-hole-pair generation. In the conventional-OBIRCH method, the laser beam creates not only a resistance change, but also a photocurrent that can mask the resistance change signals.

Original languageEnglish
Pages (from-to)1048-1050
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number7
Publication statusPublished - 1999 Feb 15
Externally publishedYes

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stimulation
integrated circuits
near fields
chips
change detection
probes
defects
photocurrents
laser beams
heat sources
masks
spatial resolution
interference
heating

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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AU - Saiki, Toshiharu

AU - Inoue, S.

AU - Ohtsu, M.

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