Impact Ionization and Critical Electric Field in 010-Oriented β-Ga2O3Schottky Barrier Diode

Takaya Sugiura, Nobuhiko Nakano

Research output: Contribution to journalArticlepeer-review

Abstract

The hole impact ionization coefficient (IIC) of β -Ga2O3 in the 〈 010〉 direction is determined by numerical simulation, as β (E) = 4.0× 105 ċ exp(-3.1 × 106E. The simulation model reproduces the experiment of the Schottky barrier diode (SBD) operation, and the investigation of the IIC is performed by varying the value to obtain the matched breakdown voltage at the reversed bias operation. The breakdown simulation results are consistent with the experimental results, with only small errors. By comparing the input modeling with the electron-only impact ionization, hole impact ionization is dominant for SBD breakdown operations.

Original languageEnglish
Pages (from-to)3068-3072
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume69
Issue number6
DOIs
Publication statusPublished - 2022 Jun 1
Externally publishedYes

Keywords

  • device simulation
  • impact ionization
  • ß-GaO
  • wide-bandgap semiconductors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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