Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Hajime Shibata, Shigeru Niki

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

CuGaSe2 (CGS) thin-films grown by the three-stage coevaporation process using various Se-fluxes during each growth stage exhibited distinctive properties different from those grown with a constant Se-flux during all three stages. CGS grain size, growth orientation, and the depletion width in solar cell devices were found to depend strongly on the Ga2Se3 precursor formed during the first stage, whereas photo-absorption spectra and device parameters were largely determined by the Se-flux used during the second and third stages when the CGS film near-surface region was formed. A certified efficiency exceeding 10 demonstrated for a ternary CGS solar cell is also reported.

Original languageEnglish
Article number143903
JournalApplied Physics Letters
Volume103
Issue number14
DOIs
Publication statusPublished - 2013 Oct 21
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Impact of a binary Ga<sub>2</sub>Se<sub>3</sub> precursor on ternary CuGaSe<sub>2</sub> thin-film and solar cell device properties'. Together they form a unique fingerprint.

  • Cite this