Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties

Shogo Ishizuka; Akimasa Yamada; Paul J. Fons; Hajime Shibata; Shigeru Niki

doi:10.1063/1.4823585

Impact of a binary Ga₂Se₃ precursor on ternary CuGaSe₂ thin-film and solar cell device properties

Shogo Ishizuka, Akimasa Yamada, Paul J. Fons, Hajime Shibata, Shigeru Niki

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

CuGaSe₂ (CGS) thin-films grown by the three-stage coevaporation process using various Se-fluxes during each growth stage exhibited distinctive properties different from those grown with a constant Se-flux during all three stages. CGS grain size, growth orientation, and the depletion width in solar cell devices were found to depend strongly on the Ga₂Se₃ precursor formed during the first stage, whereas photo-absorption spectra and device parameters were largely determined by the Se-flux used during the second and third stages when the CGS film near-surface region was formed. A certified efficiency exceeding 10 demonstrated for a ternary CGS solar cell is also reported.

Original language	English
Article number	143903
Journal	Applied Physics Letters
Volume	103
Issue number	14
DOIs	https://doi.org/10.1063/1.4823585
Publication status	Published - 2013 Sept 30
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4823585

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title = "Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties",

abstract = "CuGaSe2 (CGS) thin-films grown by the three-stage coevaporation process using various Se-fluxes during each growth stage exhibited distinctive properties different from those grown with a constant Se-flux during all three stages. CGS grain size, growth orientation, and the depletion width in solar cell devices were found to depend strongly on the Ga2Se3 precursor formed during the first stage, whereas photo-absorption spectra and device parameters were largely determined by the Se-flux used during the second and third stages when the CGS film near-surface region was formed. A certified efficiency exceeding 10 demonstrated for a ternary CGS solar cell is also reported.",

author = "Shogo Ishizuka and Akimasa Yamada and Fons, {Paul J.} and Hajime Shibata and Shigeru Niki",

note = "Funding Information: The authors would like to thank M. Iioka, M. Takano, H. Higuchi, S. Kimura, and A. Obara for their help with the experiments and technical support. The authors also thank Y. Kamikawa, H. Komaki, and H. Tampo for fruitful discussions. This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).",

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T1 - Impact of a binary Ga2Se3 precursor on ternary CuGaSe2 thin-film and solar cell device properties

AU - Ishizuka, Shogo

AU - Yamada, Akimasa

AU - Fons, Paul J.

AU - Shibata, Hajime

AU - Niki, Shigeru

N1 - Funding Information: The authors would like to thank M. Iioka, M. Takano, H. Higuchi, S. Kimura, and A. Obara for their help with the experiments and technical support. The authors also thank Y. Kamikawa, H. Komaki, and H. Tampo for fruitful discussions. This work was supported in part by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).

PY - 2013/9/30

Y1 - 2013/9/30

N2 - CuGaSe2 (CGS) thin-films grown by the three-stage coevaporation process using various Se-fluxes during each growth stage exhibited distinctive properties different from those grown with a constant Se-flux during all three stages. CGS grain size, growth orientation, and the depletion width in solar cell devices were found to depend strongly on the Ga2Se3 precursor formed during the first stage, whereas photo-absorption spectra and device parameters were largely determined by the Se-flux used during the second and third stages when the CGS film near-surface region was formed. A certified efficiency exceeding 10 demonstrated for a ternary CGS solar cell is also reported.

AB - CuGaSe2 (CGS) thin-films grown by the three-stage coevaporation process using various Se-fluxes during each growth stage exhibited distinctive properties different from those grown with a constant Se-flux during all three stages. CGS grain size, growth orientation, and the depletion width in solar cell devices were found to depend strongly on the Ga2Se3 precursor formed during the first stage, whereas photo-absorption spectra and device parameters were largely determined by the Se-flux used during the second and third stages when the CGS film near-surface region was formed. A certified efficiency exceeding 10 demonstrated for a ternary CGS solar cell is also reported.

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ER -

Impact of a binary Ga₂Se₃ precursor on ternary CuGaSe₂ thin-film and solar cell device properties

Abstract

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