Impact of Deformation potential increase at Si/SiO2 interfaces on stress-induced electron mobility enhancement in metal-oxide-semiconductor field-effect transistors

Teruyuki Ohashi, Shunri Oda, Ken Uchida

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Fingerprint Dive into the research topics of 'Impact of Deformation potential increase at Si/SiO<sub>2</sub> interfaces on stress-induced electron mobility enhancement in metal-oxide-semiconductor field-effect transistors'. Together they form a unique fingerprint.

    Engineering & Materials Science

    Physics & Astronomy