Impact of the device scaling on the low-frequency noise in n-MOSFETs

H. M. Bu, Y. Shi, X. L. Yuan, Y. D. Zheng, S. H. Gu, H. Majima, Hiroki Ishikuro, T. Hiramoto

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The impact of device scaling on modern MOS technology is discussed in terms of the random telegraph signals (RTSs) and low-frequency noise in n-MOSFETs with gradually decreased channel widths. RTSs with very large amplitude (> 60%) are observed in the devices with ultra-narrow channels at room temperature for the first time. Furthermore, low-frequency noise spectra having both 1/f′ and Lorentzian type are found separately in the same ultra-narrow channel at different gate bias voltage, whereas only 1/f′ noise is observed in relatively wide channels. The observations strongly suggest that low-frequency noise in weak inversion dominantly suffer from carrier mobility fluctuation rather than carrier number fluctuation in ultra-narrow channels, which is confirmed by numerical simulations.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume71
Issue number2
Publication statusPublished - 2000 Aug
Externally publishedYes

Fingerprint

Telegraph
field effect transistors
low frequencies
scaling
Carrier mobility
Bias voltage
Computer simulation
noise spectra
carrier mobility
Temperature
inversions
electric potential
room temperature
simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Bu, H. M., Shi, Y., Yuan, X. L., Zheng, Y. D., Gu, S. H., Majima, H., ... Hiramoto, T. (2000). Impact of the device scaling on the low-frequency noise in n-MOSFETs. Applied Physics A: Materials Science and Processing, 71(2), 133-136.

Impact of the device scaling on the low-frequency noise in n-MOSFETs. / Bu, H. M.; Shi, Y.; Yuan, X. L.; Zheng, Y. D.; Gu, S. H.; Majima, H.; Ishikuro, Hiroki; Hiramoto, T.

In: Applied Physics A: Materials Science and Processing, Vol. 71, No. 2, 08.2000, p. 133-136.

Research output: Contribution to journalArticle

Bu, HM, Shi, Y, Yuan, XL, Zheng, YD, Gu, SH, Majima, H, Ishikuro, H & Hiramoto, T 2000, 'Impact of the device scaling on the low-frequency noise in n-MOSFETs', Applied Physics A: Materials Science and Processing, vol. 71, no. 2, pp. 133-136.
Bu HM, Shi Y, Yuan XL, Zheng YD, Gu SH, Majima H et al. Impact of the device scaling on the low-frequency noise in n-MOSFETs. Applied Physics A: Materials Science and Processing. 2000 Aug;71(2):133-136.
Bu, H. M. ; Shi, Y. ; Yuan, X. L. ; Zheng, Y. D. ; Gu, S. H. ; Majima, H. ; Ishikuro, Hiroki ; Hiramoto, T. / Impact of the device scaling on the low-frequency noise in n-MOSFETs. In: Applied Physics A: Materials Science and Processing. 2000 ; Vol. 71, No. 2. pp. 133-136.
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