Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films

K. Nagashio, T. Yamashita, J. Fujita, T. Nishimura, K. Kita, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

Field effect mobility of the graphene transferred on the SiO2/Si substrate scatters in various reports and is limited to a typical value of ∼10,000 cm2/Vs. Without understanding the interaction between graphene and SiO2, it is difficult to improve transport properties. This paper discusses effects of various plasma treatments and reoxidization of the SiO2 surface on graphene characteristics.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages23.4.1-23.4.4
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Nagashio, K., Yamashita, T., Fujita, J., Nishimura, T., Kita, K., & Toriumi, A. (2010). Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 23.4.1-23.4.4). [5703421] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703421