Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films

K. Nagashio, Tadahiro Yamashita, J. Fujita, T. Nishimura, K. Kita, A. Toriumi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Field effect mobility of the graphene transferred on the SiO2/Si substrate scatters in various reports and is limited to a typical value of ∼10,000 cm2/Vs. Without understanding the interaction between graphene and SiO2, it is difficult to improve transport properties. This paper discusses effects of various plasma treatments and reoxidization of the SiO2 surface on graphene characteristics.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

Fingerprint

Graphite
Field effect transistors
Graphene
Raman scattering
graphene
field effect transistors
Raman spectra
interactions
Transport properties
transport properties
Plasmas
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Nagashio, K., Yamashita, T., Fujita, J., Nishimura, T., Kita, K., & Toriumi, A. (2010). Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 [5703421] https://doi.org/10.1109/IEDM.2010.5703421

Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. / Nagashio, K.; Yamashita, Tadahiro; Fujita, J.; Nishimura, T.; Kita, K.; Toriumi, A.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703421.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nagashio, K, Yamashita, T, Fujita, J, Nishimura, T, Kita, K & Toriumi, A 2010, Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703421, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703421
Nagashio K, Yamashita T, Fujita J, Nishimura T, Kita K, Toriumi A. Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703421 https://doi.org/10.1109/IEDM.2010.5703421
Nagashio, K. ; Yamashita, Tadahiro ; Fujita, J. ; Nishimura, T. ; Kita, K. ; Toriumi, A. / Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010.
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